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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NHPM220T3GDIODE GEN PURP 200V 2A POWERMITE onsemi |
2,782 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 500 nA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 1.05 V @ 2 A | |
|
VS-EPH3006-F3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,557 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 26 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.65 V @ 30 A | |
|
SE70PGHM3/87ADIODE GEN PURP 400V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
2,440 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 400 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A |
|
SBL1040HE3/45DIODE SCHOTTKY 40V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,528 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 40 V | 40 V | 10A | -40°C ~ 125°C | 600 mV @ 10 A |
|
GB02SLT12-220DIODE SCHOTTKY 1.2KV 2A TO220AC GeneSiC Semiconductor |
3,321 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 138pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 2A | -55°C ~ 175°C | 1.8 V @ 2 A | ||
|
JANTX1N5304-1DIODE CURRENT REG 100V Microchip Technology |
3,022 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Discontinued at Digi-Key | Through Hole | - | - | - | - | - | - | - |
|
NRVBA320T3GDIODE SCHOTTKY 20V 3A SMA onsemi |
3,146 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 20 V | 20 V | 3A | -65°C ~ 125°C | 500 mV @ 3 A |
|
|
VS-EPU3006-F3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,662 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2 V @ 30 A | |
|
|
SE70PJHM3/87ADIODE GEN PURP 600V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
3,872 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 600 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A |
|
|
SBL10L25HE3/45DIODE SCHOTTKY 25V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,377 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 800 µA @ 25 V | 25 V | 10A | -65°C ~ 150°C | 460 mV @ 10 A |
|
GB02SLT12-252DIODE SIC SCHKY 1.2KV 2A TO252 GeneSiC Semiconductor |
3,268 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 131pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.8 V @ 2 A |
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|
JANTXV1N5313UR-1DIODE CURRENT REG 100V Microchip Technology |
2,209 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Discontinued at Digi-Key | Surface Mount | - | - | - | - | - | - | - |
|
NRVBB1645T4GDIODE SCHOTTKY 45V 16A D2PAK Rochester Electronics, LLC |
8,000 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 175°C | 630 mV @ 16 A |
|
VS-HFA06TB120-N3DIODE GEN PURP 1.2KV 6A TO220AC Vishay General Semiconductor - Diodes Division |
3,239 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 80 ns | 5 µA @ 1200 V | 1200 V | 6A | -55°C ~ 150°C | 3 V @ 6 A |
|
SS19-M3/5ATDIODE SCHOTTKY 1A 90V DO-214AC Vishay General Semiconductor - Diodes Division |
3,570 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | - | 90 V | 1A | - | - | ||
|
|
SBL10L30-E3/45DIODE SCHOTTKY 30V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,131 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 30 V | 30 V | 10A | -65°C ~ 150°C | 520 mV @ 10 A | |
|
|
GB10SLT12-220DIODE SCHOTTKY 1200V 10A TO220AC GeneSiC Semiconductor |
3,947 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 520pF @ 1V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.8 V @ 10 A | ||
|
|
JAN1N5550USDIODE GEN PURP 200V 3A B-MELF Microchip Technology |
3,343 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 2 µs | 1 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A |
|
|
NRVTSM260ET3GDIODE SCHOTTKY 60V 2A POWERMITE onsemi |
2,873 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 12 µA @ 60 V | 60 V | 2A | -55°C ~ 175°C | 650 mV @ 2 A |
|
|
VS-HFA08TB120-N3DIODE GEN PURP 1.2KV 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,335 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 10 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 3.3 V @ 8 A |
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