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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS24SHE3_A/IDIODE SCHOTTKY 2A 40V DO-214AC Vishay General Semiconductor - Diodes Division |
3,059 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
SBL10L30HE3/45DIODE SCHOTTKY 30V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,287 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 30 V | 30 V | 10A | -65°C ~ 150°C | 520 mV @ 10 A |
|
GB10SLT12-252DIODE SCHOTTKY 1.2KV 10A TO252 GeneSiC Semiconductor |
2,260 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 520pF @ 1V, 1MHz | 0 ns | 250 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 2 V @ 10 A | |
|
JAN1N5552USDIODE GEN PURP 600V 3A B-MELF Microchip Technology |
2,438 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 2 µs | 1 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A |
|
NTS10120EMFST3GDIODE SCHOTTKY 120V 10A 5DFN onsemi |
3,412 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 30 µA @ 120 V | 120 V | 10A | -55°C ~ 175°C | 820 mV @ 10 A | |
|
VS-HFA08TB60-N3DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,743 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 55 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
SS5P10HM3/87ADIODE SCHOTTKY 5A 100V TO-277A Vishay General Semiconductor - Diodes Division |
2,481 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 15 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 880 mV @ 5 A |
|
GPP100MS-E3/54DIODE GEN PURP 1KV 10A P600 Vishay General Semiconductor - Diodes Division |
3,175 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 110pF @ 4V, 1MHz | 5.5 µs | 5 µA @ 1000 V | 1000 V | 10A | -55°C ~ 175°C | 1.05 V @ 10 A | |
|
JANTXV1N5554USDIODE GEN PURP 1KV 3A B-MELF Microchip Technology |
2,434 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 2 µs | 1 µA @ 1000 V | 1000 V | 3A | -65°C ~ 175°C | 1.3 V @ 9 A |
|
|
SBL8L40-E3/45DIODE SCHOTTKY 40V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,642 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 40 V | 40 V | 8A | -65°C ~ 125°C | 500 mV @ 8 A | |
|
FERD20U60DJFD-TRDIODE RECT 60V 20A POWERFLAT STMicroelectronics |
3,512 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | FERD (Field Effect Rectifier Diode) | Active | Surface Mount | - | - | 800 µA @ 60 V | 60 V | 20A | 150°C (Max) | 510 mV @ 20 A | |
|
ES1GL RVGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,277 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
RB511SM-30T2RSCHOTTKY BARRIER DIODE - RB511SM Rohm Semiconductor |
2,848 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 7 µA @ 10 V | 30 V | 100mA | 125°C (Max) | 370 mV @ 10 mA | |
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|
V2P6L-M3/HSCHOTTKY RECTIFIER 2A 60V SMP Vishay General Semiconductor - Diodes Division |
922 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 255pF @ 4V, 1MHz | - | 480 µA @ 60 V | 60 V | 2A (DC) | -40°C ~ 150°C | 600 mV @ 2 A |
|
RB500V-40-TPDIODE SCHOTTKY 40V 100MA SOD323 Micro Commercial Co |
3,411 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 6pF @ 10V, 1MHz | - | 1 µA @ 10 V | 40 V | 100mA | 125°C (Max) | 450 mV @ 10 mA | |
|
6A8-TPDIODE GEN PURP 800V 6A R6 Micro Commercial Co |
433 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Not For New Designs | Through Hole | - | - | 10 µA @ 800 V | 800 V | 6A | -55°C ~ 125°C | 950 mV @ 6 A | |
|
RR601BM4STLDIODE GEN PURP 400V 6A TO252 Rohm Semiconductor |
2,125 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 6A | 150°C (Max) | 1.1 V @ 6 A | |
|
STTH1R02ZFYDIODE GEN PURP 200V 1A SOD123F STMicroelectronics |
2,508 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 32 ns | 500 nA @ 200 V | 200 V | 1A | -40°C ~ 175°C | 1 V @ 1 A |
|
CES388,L3FDIODE SCHOTTKY 40V 100MA ESC Toshiba Semiconductor and Storage |
2,309 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 25pF @ 0V, 1MHz | - | 5 µA @ 40 V | 40 V | 100mA | 125°C (Max) | 600 mV @ 100 mA | |
|
|
V2PL45L-M3/HSCHOTTKY RECTIFIER 2A 45V SMP Vishay General Semiconductor - Diodes Division |
854 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 390pF @ 4V, 1MHz | - | 300 µA @ 45 V | 45 V | 2A (DC) | -40°C ~ 150°C | 530 mV @ 2 A |
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