| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CDBB1200-HFDIODE SCHOTTKY 200V 1A DO214AA Comchip Technology |
969 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 500 µA @ 200 V | 200 V | 1A | -50°C ~ 175°C | 900 mV @ 1 A | |
|
BYV26EGP-E3/73DIODE AVALANCHE 1000V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,274 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A |
|
P600D-E3/54DIODE GEN PURP 200V 6A P600 Vishay General Semiconductor - Diodes Division |
2,735 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 200 V | 200 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
STTH15L06G-TRDIODE GEN PURP 600V 20A D2PAK STMicroelectronics |
3,021 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 85 ns | 15 µA @ 600 V | 600 V | 20A | 175°C (Max) | 1.55 V @ 15 A | |
|
RB162MM-30TRDIODE SCHOTTKY 30V 1A PMDU Rohm Semiconductor |
163 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 30 V | 30 V | 1A | 150°C (Max) | 520 mV @ 1 A | |
|
VSSAF5L45-M3/6ADIODE SCHOTTKY 45V 3A DO221AC Vishay General Semiconductor - Diodes Division |
2,281 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 740pF @ 4V, 1MHz | - | 650 µA @ 45 V | 45 V | 3A (DC) | -40°C ~ 150°C | 560 mV @ 5 A |
|
US1DWF-7DIODE GEN PURP 200V 1A SOD123F Diodes Incorporated |
840 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
BYV26DGP-E3/73DIODE GEN PURP 800V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,690 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A |
|
P600K-E3/54DIODE GEN PURP 800V 6A P600 Vishay General Semiconductor - Diodes Division |
2,343 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 800 V | 800 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
|
FERD20S100STSDIODE RECT 100V 20A TO220AB STMicroelectronics |
2,870 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | FERD (Field Effect Rectifier Diode) | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 20A | 175°C (Max) | 780 mV @ 10 A | |
|
VS-2EFH02HM3/IDIODE GEN PURP 200V 2A DO219AB Vishay General Semiconductor - Diodes Division |
10,127 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A |
|
|
CMSH2-40 TR13 PBFREEDIODE SCHOTTKY 40V 2A SMB Central Semiconductor Corp |
3,325 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 150pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 2A | -65°C ~ 150°C | 500 mV @ 2 A | |
|
ESH1DM RSGDIODE GEN PURP 200V 1A MICRO SMA Taiwan Semiconductor Corporation |
18,893 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 3pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.5 V @ 1 A | |
|
MURA140T3GDIODE GEN PURP 400V 2A SMA onsemi |
22,438 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 65 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
P600A-E3/54DIODE GEN PURP 50V 6A P600 Vishay General Semiconductor - Diodes Division |
2,012 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 50 V | 50 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
DS135AEDIODE GEN PURP 100V 1A DO204AL Rochester Electronics, LLC |
308,310 | - |
RFQ |
Datasheet |
Bulk,Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 10 µA @ 100 V | 100 V | 1A | 150°C (Max) | 1 V @ 1 A | |
|
SBRT3U60SA-13DIODE SBR 60V 3A SMA Diodes Incorporated |
3,003 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Obsolete | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 560 mV @ 3 A | |
|
1N4002-N-0-1-BPDIODE GEN PURP 100V 1A DO41 Micro Commercial Co |
2,379 | - |
RFQ |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 100 V | 100 V | 1A (DC) | - | 1 V @ 1 A | ||
|
|
GP2D003A065ADIODE SCHOTTKY 650V 3A TO220-2 SemiQ |
2,889 | - |
RFQ |
Datasheet |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 158pF @ 1V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 3A (DC) | -55°C ~ 175°C | 1.65 V @ 3 A |
|
UH1D-M3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,308 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 17pF @ 4V, 1MHz | 30 ns | 1 µA @ 150 V | 200 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |