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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBR745GDIODE SCHOTTKY 45V 7.5A TO220-2 Rochester Electronics, LLC |
11,350 | - |
RFQ |
Datasheet |
Bulk,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 175°C | 840 mV @ 15 A |
|
ESH2D R5GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
938 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 20 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 900 mV @ 2 A | |
|
STD15150TRSCHOTTKY 150V DPAK SMC Diode Solutions |
3,136 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 670pF @ 5V, 1MHz | - | 200 µA @ 150 V | 150 V | 15A | -55°C ~ 150°C | 1.36 V @ 15 A | |
|
PMEG120G30ELPXPMEG120G30ELP/SOD128/FLATPOWER Nexperia USA Inc. |
640 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | SiGe (Silicon Germanium) | Active | Surface Mount | 103pF @ 1V, 1MHz | 11 ns | 30 nA @ 120 V | 120 V | 3A | 175°C (Max) | 840 mV @ 3 A |
|
VSSA310S-E3/5ATDIODE SCHOTTKY 100V 1.7A DO214AC Vishay General Semiconductor - Diodes Division |
2,238 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 175pF @ 4V, 1MHz | - | 150 µA @ 100 V | 100 V | 1.7A (DC) | -40°C ~ 150°C | 800 mV @ 3 A |
|
SL43-E3/57TDIODE SCHOTTKY 30V 4A DO214AB Vishay General Semiconductor - Diodes Division |
3,783 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 4A | -55°C ~ 125°C | 420 mV @ 4 A | |
|
NRVBS4201T3GDIODE SCHOTTKY 200V 4A SMC onsemi |
2,202 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | 35 ns | 1 mA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 860 mV @ 4 A | |
|
RB068L-40DDTE25SCHOTTKY BARRIER DIODE (AEC-Q101 Rohm Semiconductor |
1,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 µA @ 40 V | 40 V | 2A | 150°C | 690 mV @ 2 A |
|
|
ES3G-E3/57TDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,659 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
BYG22B-E3/TRDIODE AVALANCHE 100V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,664 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
SE30AFJ-M3/6ADIODE GEN PURP 600V 1.4A DO221AC Vishay General Semiconductor - Diodes Division |
2,658 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 1.4A (DC) | -55°C ~ 175°C | 1.1 V @ 3 A |
|
DSS6-015AS-TRLDIODE SCHOTTKY 150V 6A TO252AA IXYS |
3,691 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 150 V | 150 V | 6A | -55°C ~ 175°C | 780 mV @ 6 A | |
|
MUR4100EGDIODE GEN PURP 1000V 4A DO201AD Rochester Electronics, LLC |
13,000 | - |
RFQ |
Datasheet |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 25 µA @ 1000 V | 1000 V | 4A | -65°C ~ 175°C | 1.85 V @ 4 A |
|
UF1M-TPDIODE 1000V 1A SMB DO214AA Micro Commercial Co |
992 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 100 ns | 10 µA @ 1000 V | 1000 V | 1A | -50°C ~ 150°C | - | |
|
SBR1045SD1-TDIODE SBR 45V 10A DO201AD Diodes Incorporated |
3,477 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SBR® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Active | Through Hole | - | - | 450 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 550 mV @ 10 A |
|
RS1JFPDIODE GP 600V 1.2A SOD123HE onsemi |
2,313 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 0V, 1MHz | 300 ns | 5 µA @ 600 V | 600 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A |
|
SF5408-TRDIODE AVALANCHE 1000V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,135 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 75 ns | 5 µA @ 1000 V | 1000 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |
|
MBR1045-E3/45DIODE SCHOTTKY 45V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,736 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 570 mV @ 10 A | |
|
|
GP2D006A065CDIODE SCHOTTKY 650V 6A TO252-2 SemiQ |
2,461 | - |
RFQ |
Datasheet |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 316pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 6A (DC) | -55°C ~ 175°C | 1.65 V @ 6 A |
|
|
UH3D-M3/57TDIODE GEN PURP 200V 2.5A DO214AB Vishay General Semiconductor - Diodes Division |
3,251 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 16pF @ 4V, 1MHz | 40 ns | 10 µA @ 200 V | 200 V | 2.5A | -55°C ~ 175°C | 1.05 V @ 6 A |
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