| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSRLL30XV2T1GDIODE SCHOTTKY 30V 200MA SOD523 onsemi |
2,710 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 1 µA @ 10 V | 30 V | 200mA (DC) | -55°C ~ 150°C | 600 mV @ 200 mA | |
|
FR102G R1GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,070 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
CLH05,LMBJQ(ODIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage |
2,902 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 5A (DC) | -40°C ~ 150°C | 980 mV @ 5 A | |
|
|
S1JLHRHGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,297 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
V20100SGHM3/4WDIODE SCHOTTKY 20A 100V TO-220AB Vishay General Semiconductor - Diodes Division |
3,780 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 350 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 1.07 V @ 20 A |
|
VS-10ETS12STRLPBFDIODE GEN PURP 1.2KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,010 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
1T2G R0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,711 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
FR103G R1GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,526 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
CLH06(TE16L,Q)DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage |
2,495 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | - | 300 V | 5A (DC) | - | - | |
|
|
S1KL RHGDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
3,896 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
V20100SHM3/4WDIODE SCHOTTKY 20A 100V TO-220AB Vishay General Semiconductor - Diodes Division |
3,997 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 350 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 1.07 V @ 20 A |
|
VS-10ETS12STRRPBFDIODE GEN PURP 1.2KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,294 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
1T3G R0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
3,482 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
FR104G R1GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,528 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
CLH06(TE16R,Q)DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage |
2,194 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | - | 300 V | 5A (DC) | - | - | |
|
|
S1KLHRHGDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
3,383 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
V20120SGHM3/4WDIODE SCHOTTKY 20A 120V TO-220AB Vishay General Semiconductor - Diodes Division |
2,337 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A |
|
BAS16-E3-08DIODE GEN PURP 75V 150MA SOT23 Vishay General Semiconductor - Diodes Division |
3,013 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 75 V | 150mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
VS-10WT10FNTRDIODE SCHOTTKY 100V 10A DPAK Vishay General Semiconductor - Diodes Division |
3,532 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 400pF @ 5V, 1MHz | - | 50 µA @ 100 V | 100 V | 10A | -40°C ~ 150°C | 810 mV @ 10 A | |
|
2A01G R0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
2,653 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |