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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-6EVX06HM3/IDIODE GEN PURPOSE 600V SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,582 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 18 ns | 5 µA @ 600 V | 600 V | 6A | -55°C ~ 175°C | 3.1 V @ 6 A |
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|
1PS79SB10,115DIODE SCHOTTKY 30V 200MA SOD523 Nexperia USA Inc. |
2,656 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | - | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA | |
|
BA158G R1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,390 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
CLH02(TE16R,Q)DIODE GEN PURP 300V 3A L-FLAT Toshiba Semiconductor and Storage |
3,090 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 300 V | 300 V | 3A (DC) | -40°C ~ 150°C | 1.3 V @ 3 A | |
|
S1DL RHGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,279 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-10ETF12STRLPBFDIODE GEN PURP 1.2KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,126 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
1N5400GHR0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,795 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
BA158GHR1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,594 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
|
CLH03(TE16L,Q)DIODE GEN PURP 400V 3A L-FLAT Toshiba Semiconductor and Storage |
2,585 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | - | 400 V | 3A (DC) | - | - | |
|
|
S1DLHRHGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,145 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
UH6PDHM3/86ADIODE GEN PURP 200V 6A TO277A Vishay General Semiconductor - Diodes Division |
2,967 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 80pF @ 4V, 1MHz | 140 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.05 V @ 6 A |
|
|
VS-10ETF12STRRPBFDIODE GEN PURP 1.2KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,403 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
1N5401G R0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,112 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
BA159G R1GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,351 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
CLH03(TE16R,Q)DIODE GEN PURP 400V 3A L-FLAT Toshiba Semiconductor and Storage |
2,420 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | - | 400 V | 3A (DC) | - | - | |
|
|
S1GL RHGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
3,048 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
UH6PD-M3/86ADIODE GEN PURP 200V 6A TO277A Vishay General Semiconductor - Diodes Division |
3,977 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 80pF @ 4V, 1MHz | 140 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.05 V @ 6 A | |
|
|
VS-10ETS08STRRPBFDIODE GEN PURP 800V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,742 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
1N5401GHR0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,780 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
BA159GHR1GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,675 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
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