| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDP08E65D2XKSA1DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies |
3,153 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 40 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | 2.3 V @ 3 A | |
|
STTH802BY-TRDIODE GEN PURP 200V 8A DPAK STMicroelectronics |
2,316 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 6 µA @ 200 V | 200 V | 8A | -40°C ~ 175°C | 1.05 V @ 8 A |
|
SBAS16LT3GDIODE GP 100V 200MA SOT23-3 onsemi |
978,524 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 100 V | 100 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 150 mA |
|
5819SMJE3/TR13DIODE SCHOTTKY 40V 1A DO214AA Microchip Technology |
3,767 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 550 mV @ 1 A | |
|
CFRB207-GDIODE GEN PURP 1KV 2A DO214AA Comchip Technology |
3,887 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 500 ns | 5 µA @ 1000 V | 1000 V | 2A | 150°C (Max) | 1.3 V @ 2 A | |
|
1N4942GP-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,883 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BYWF29-200-E3/45DIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,133 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
NSB8AT-E3/81DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,006 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
RB520SM-30T2RDIODE SCHOTTKY 30V 200MA EMD2 Rohm Semiconductor |
807 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 1 µA @ 10 V | 30 V | 200mA | 150°C (Max) | 580 mV @ 200 mA | |
|
V35PW15HM3/IDIODE SCHOTTKY 150V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,629 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1620pF @ 4V, 1MHz | - | 250 µA @ 150 V | 150 V | 35A | -40°C ~ 150°C | 1.4 V @ 35 A |
|
RB162MM-60TFTRRB162MM-60TF IS THE HIGH RELIABI Rohm Semiconductor |
3,128 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 1A | 150°C (Max) | 650 mV @ 1 A |
|
BA159GP-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,130 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
UGB8DT-E3/45DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,840 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
|
|
RGP30K-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,760 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 500 ns | 5 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
1N4006RLGDIODE GEN PURP 800V 1A AXIAL onsemi |
1,719,250 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-30WQ06FN-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,409 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 5V, 1MHz | - | 2 µA @ 60 V | 60 V | 3.5A | -40°C ~ 150°C | 610 mV @ 3 A | |
|
UF4006-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,138 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
HER303G R0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,765 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
VS-20WT04FNTRDIODE SCHOTTKY 20A DPAK Vishay General Semiconductor - Diodes Division |
3,705 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 1900pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 20A | -55°C ~ 175°C | 610 mV @ 20 A | |
|
SFS1007G MNGDIODE GEN PURP 500V 10A TO263AB Taiwan Semiconductor Corporation |
3,232 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 35 ns | 1 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A |