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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N458DIODE GEN PURP 70V 150MA DO35 Microchip Technology |
3,044 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/193 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 70 V | 70 V | 150mA | -65°C ~ 150°C | 1 V @ 100 mA |
|
ES1BLHMHGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,525 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
SR005 R1GDIODE SCHOTTKY 50V 500MA DO204AL Taiwan Semiconductor Corporation |
2,491 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA | |
|
HER601G R0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
3,883 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
VS-20WT04FNTRLDIODE SCHOTTKY 20A DPAK Vishay General Semiconductor - Diodes Division |
3,940 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 1900pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 540 mV @ 10 A | |
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|
SFS1007GHMNGDIODE GEN PURP 500V 10A TO263AB Taiwan Semiconductor Corporation |
2,050 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 35 ns | 1 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A |
|
JANTX1N1184DIODE GEN PURP 100V 35A DO5 Microchip Technology |
2,432 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/297 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 100 V | 35A | -65°C ~ 175°C | 1.4 V @ 110 A |
|
ES1C M2GDIODE GEN PURP 150V 1A DO214AC Taiwan Semiconductor Corporation |
2,007 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 16pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
SR005HR1GDIODE SCHOTTKY 50V 500MA DO204AL Taiwan Semiconductor Corporation |
2,742 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA |
|
|
HER602G R0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
3,686 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
VS-20WT04FNTRRDIODE SCHOTTKY 20A DPAK Vishay General Semiconductor - Diodes Division |
2,207 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 1900pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 540 mV @ 10 A | |
|
|
SFS1008G MNGDIODE GEN PURP 600V 10A TO263AB Taiwan Semiconductor Corporation |
3,976 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
JANTX1N1614DIODE GEN PURP 200V 15A DO203AA Microchip Technology |
3,257 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/162 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Stud Mount | - | - | 50 µA @ 200 V | 200 V | 15A | -65°C ~ 175°C | 1.5 V @ 15 A |
|
|
ES1CHM2GDIODE GEN PURP 150V 1A DO214AC Taiwan Semiconductor Corporation |
2,358 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
SR006 R1GDIODE SCHOTTKY 60V 500MA DO204AL Taiwan Semiconductor Corporation |
2,018 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA | |
|
|
HER603G R0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
3,015 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
VS-25ETS08STRLPBFDIODE GEN PURP 800V 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,023 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
SFS1008GHMNGDIODE GEN PURP 600V 10A TO263AB Taiwan Semiconductor Corporation |
2,070 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A |
|
JANTX1N3164DIODE GEN PURP 200V 300A DO205AB Microchip Technology |
3,281 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/211 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 mA @ 200 V | 200 V | 300A | -65°C ~ 200°C | 1.55 V @ 940 A |
|
|
ES1CL M2GDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,195 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
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