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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-MBR1645-M3DIODE SCHOTTKY 16A 45V TO-220AC Vishay General Semiconductor - Diodes Division |
1,000 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
VS-HFA04TB60S-M3DIODE GEN PURP 600V 4A D2PAK Vishay General Semiconductor - Diodes Division |
3,851 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A (DC) | -55°C ~ 150°C | 2.2 V @ 8 A |
|
BAV20W-7-FDIODE GEN PURP 150V 200MA SOD123 Diodes Incorporated |
3,331 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 200mA | -65°C ~ 150°C | 1.25 V @ 200 mA | |
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|
STPS5H100BY-TRDIODE SCHOTTKY 100V 5A DPAK STMicroelectronics |
3,103 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3.5 µA @ 100 V | 100 V | 5A | -40°C ~ 175°C | 730 mV @ 5 A |
|
ES1CL MHGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,440 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
SR009 R1GDIODE SCHOTTKY 90V 500MA DO204AL Taiwan Semiconductor Corporation |
2,691 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 90 V | 90 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA | |
|
HT12G R0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,136 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
VS-25ETS10STRLPBFDIODE GEN PURP 1KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,607 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 1000 V | 1000 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
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|
SFS1601GHMNGDIODE GEN PURP 50V 16A TO263AB Taiwan Semiconductor Corporation |
2,626 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A |
|
JANTX1N485BDIODE GEN PURP 180V 200MA DO35 Microchip Technology |
2,311 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/118 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 180 V | 180 V | 200mA (DC) | -65°C ~ 175°C | 1 V @ 100 mA |
|
|
ES1CLHM2GDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,675 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
SR009HR1GDIODE SCHOTTKY 90V 500MA DO204AL Taiwan Semiconductor Corporation |
3,443 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 90 V | 90 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA |
|
|
HT13G R0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
2,189 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
VS-25ETS10STRRPBFDIODE GEN PURP 1KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
2,618 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 1000 V | 1000 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
SFS1602G MNGDIODE GEN PURP 100V 16A TO263AB Taiwan Semiconductor Corporation |
2,522 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A | |
|
|
JANTX1N486BDIODE GEN PURP 225V 200MA DO35 Microchip Technology |
2,757 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/118 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 25 nA @ 225 V | 225 V | 200mA (DC) | -65°C ~ 175°C | 1 V @ 100 mA |
|
|
ES1CLHMHGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,218 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
SR010 R1GDIODE SCHOTTKY 100V 500MA DO204 Taiwan Semiconductor Corporation |
2,819 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA | |
|
SF21G R0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
3,442 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
VS-25ETS12STRLPBFDIODE GEN PURP 1.2KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
2,753 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A |
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