| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5406-FDIODE GEN PURP 600V 3A DO-201AD Rectron USA |
2,164 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 200 nA @ 1000 V | - | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
XBS104V14R-GDIODE SCHOTTKY 40V 1A SOD123A Torex Semiconductor Ltd |
3,048 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 150pF @ 1V, 1MHz | 41 ns | 2 mA @ 40 V | 40 V | 1A | 125°C (Max) | 410 mV @ 1 A | |
|
MURD530T4GDIODE GEN PURP 300V 5A DPAK onsemi |
2,751 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 300 V | 300 V | 5A | -55°C ~ 175°C | 1.05 V @ 5 A |
|
1N6483-E3/96DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,319 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
V8PM10S-M3/IDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,612 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 860pF @ 4V, 1MHz | - | 200 µA @ 100 V | 100 V | 8A | -40°C ~ 175°C | 780 mV @ 8 A |
|
FFSB0865B650V 8A SIC SBD GEN1.5 onsemi |
2,804 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 336pF @ 1V, 100kHz | - | 40 µA @ 650 V | 650 V | 10.1A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | |
|
SS16RECTIFIER, SCHOTTKY, 1A, 60V Rochester Electronics, LLC |
2,184 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 1A | -65°C ~ 125°C | 700 mV @ 1 A | |
|
|
STTH110DIODE GEN PURP 1KV 1A DO41 STMicroelectronics |
2,507 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 1000 V | 1000 V | 1A | 175°C (Max) | 1.7 V @ 1 A | |
|
|
MBR760-E3/45DIODE SCHOTTKY 60V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
3,984 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 7.5A | -65°C ~ 175°C | 750 mV @ 7.5 A | |
|
GL34D-E3/83DIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,072 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
|
V8PA10-M3/IDIODE SCHOTTKY 100V 8A DO221BC Vishay General Semiconductor - Diodes Division |
2,400 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 850pF @ 4V, 1MHz | - | 800 µA @ 100 V | 100 V | 8A | -40°C ~ 150°C | 760 mV @ 8 A |
|
STPSC12065G-TRSILICON CARBIDE DIODES STMicroelectronics |
2,048 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 750pF @ 0V, 1MHz | 0 ns | 150 µA @ 650 V | 650 V | 12A | -40°C ~ 175°C | 1.45 V @ 12 A |
|
SS24RECTIFIER, SCHOTTKY, 2A, 40V Rochester Electronics, LLC |
3,041 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -65°C ~ 125°C | 500 mV @ 2 A | |
|
VS-MBRS340-M3/9ATDIODE SCHOTTKY 40V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,061 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 230pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 525 mV @ 3 A | |
|
SRAS890 MNGDIODE SCHOTTKY 90V 8A TO263AB Taiwan Semiconductor Corporation |
3,188 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
VS-301URA240DIODE GP 2.4KV 330A DO205AB Vishay General Semiconductor - Diodes Division |
3,770 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 2400 V | 330A | -40°C ~ 180°C | 1.46 V @ 942 A | |
|
|
ES1JL RQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,283 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
MBR860ULPS-TPDIODE SCHOTTKY 60V 8A TO277B Micro Commercial Co |
3,105 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 600 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | 530 mV @ 8 A | |
|
ES2CHM4GDIODE GEN PURP 150V 2A DO214AA Taiwan Semiconductor Corporation |
3,675 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
S8MC M6GDIODE GEN PURP 8A DO214AB Taiwan Semiconductor Corporation |
3,063 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 1000 V | - | 8A | -55°C ~ 150°C | 985 mV @ 8 A |