| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SRAS890HMNGDIODE SCHOTTKY 90V 8A TO263AB Taiwan Semiconductor Corporation |
2,290 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
VS-301URA80DIODE GEN PURP 800V 330A DO205AB Vishay General Semiconductor - Diodes Division |
2,260 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 800 V | 330A | -40°C ~ 180°C | 1.46 V @ 942 A | |
|
|
ES1JL RTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,429 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
RB520S-30EP-TPDIODE SCHOTTKY 30V 100MA 0201B Micro Commercial Co |
3,367 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | - | - | 20 µA @ 30 V | 30 V | 100mA (DC) | 125°C (Max) | 850 mV @ 100 mA | |
|
|
ES2HA M2GDIODE GEN PURP 500V 2A DO214AC Taiwan Semiconductor Corporation |
3,549 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
S8MCHM6GDIODE GEN PURP 8A DO214AB Taiwan Semiconductor Corporation |
3,642 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 1000 V | - | 8A | -55°C ~ 150°C | 985 mV @ 8 A |
|
UGS5J MNGDIODE GEN PURP 600V 5A TO263AB Taiwan Semiconductor Corporation |
3,562 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 20 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 2 V @ 5 A | |
|
VS-30BQ100GPBFDIODE SCHOTTKY 3.0A SMC Vishay General Semiconductor - Diodes Division |
2,886 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 115pF @ 5V, 1MHz | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 790 mV @ 3 A | |
|
|
ES1JLHMQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,745 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
SMD110HE-TPDIODE SCHOTTKY 100V 1A SOD123HE Micro Commercial Co |
2,067 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 850 mV @ 2 A | |
|
ES2HM4GDIODE GEN PURP 500V 2A DO214AA Taiwan Semiconductor Corporation |
3,101 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
SK510C M6GDIODE SCHOTTKY 100V 5A DO214AB Taiwan Semiconductor Corporation |
3,301 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
|
|
ES1AL MQGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,204 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
VS-31DQ09GDIODE SCHOTTKY 90V 3.3A C16 Vishay General Semiconductor - Diodes Division |
2,115 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 5V, 1MHz | - | 100 µA @ 90 V | 90 V | 3.3A | -40°C ~ 150°C | 850 mV @ 3 A | |
|
|
ES1JLHMTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,965 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
SMD115HE-TPDIODE SCHOTTKY 150V 1A SOD123HE Micro Commercial Co |
2,478 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
ES3DBHM4GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
3,494 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 46pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
SK510CHM6GDIODE SCHOTTKY 100V 5A DO214AB Taiwan Semiconductor Corporation |
2,039 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A |
|
|
ES1AL MTGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,712 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
VS-31DQ10GDIODE SCHOTTKY 100V 3.3A C16 Vishay General Semiconductor - Diodes Division |
2,441 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 5V, 1MHz | - | 100 µA @ 100 V | 100 V | 3.3A | -40°C ~ 150°C | 850 mV @ 3 A |