| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HS1KL MTGDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
3,859 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SIDC10D120H8X1SA2DIODE GEN PURP 1.2KV 15A WAFER Infineon Technologies |
2,715 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 15A (DC) | -40°C ~ 175°C | 1.97 V @ 7.5 A | |
|
|
RS1AHM2GDIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
3,996 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
SK86CHM6GDIODE SCHOTTKY 60V 8A DO214AB Taiwan Semiconductor Corporation |
3,834 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | 750 mV @ 8 A |
|
|
JANTXV1N4148-1DIODE GEN PURP 75V 200MA DO35 MACOM Technology Solutions |
3,183 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/116 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Discontinued at Digi-Key | Through Hole | - | 5 ns | 500 nA @ 75 V | 75 V | 200mA (DC) | -65°C ~ 200°C | 1.2 V @ 50 mA |
|
|
ES1DLHMTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,413 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
HS1KL RQGDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
2,516 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SIDC14D120H8X1SA1DIODE GEN PURP 1.2KV 25A WAFER Infineon Technologies |
3,341 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 20 µA @ 1200 V | 1200 V | 25A (DC) | -40°C ~ 175°C | 1.97 V @ 25 A | |
|
|
RS1AL M2GDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
3,156 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
SS310 M6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,760 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
|
JANTXV1N4454-1DIODE GEN PURP 50V 200MA DO35 MACOM Technology Solutions |
3,330 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/144 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Discontinued at Digi-Key | Through Hole | - | 4 ns | 100 µA @ 50 V | 50 V | 200mA (DC) | -55°C ~ 175°C | 800 mV @ 10 mA |
|
|
ES1DLHRQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,368 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
HS1KL RTGDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
2,853 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SIDC23D120H8X1SA1DIODE GEN PURP 1.2KV 35A WAFER Infineon Technologies |
2,162 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 35A (DC) | -40°C ~ 175°C | 1.97 V @ 35 A | |
|
|
RS1AL MHGDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
2,250 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
SS310HM6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,765 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
JANTXV1N6640DIODE GEN PURP 50V 300MA D-5D MACOM Technology Solutions |
3,074 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/578 & /609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 4 ns | 90 µA @ 50 V | 50 V | 300mA (DC) | -65°C ~ 175°C | 1 V @ 200 mA |
|
|
ES1DLHRTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,075 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
HS1ML MQGDIODE GEN PURP 1A SUB SMA Taiwan Semiconductor Corporation |
2,152 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SIDC30D120H8X1SA4DIODE GEN PURP 1.2KV 50A WAFER Infineon Technologies |
3,537 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 50A (DC) | -40°C ~ 175°C | 1.97 V @ 50 A |