| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP02-30-E3/54DIODE GEN PURP 3KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
2,871 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 3000 V | 3000 V | 250mA | -65°C ~ 175°C | 3 V @ 1 A |
|
|
HS1JL MQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,599 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
IDC51D120T6MX1SA3DIODE GEN PURP 1.2KV 100A WAFER Infineon Technologies |
2,647 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 18 µA @ 1200 V | 1200 V | 100A | -40°C ~ 175°C | 2.05 V @ 100 A | |
|
HS2B M4GDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
3,437 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
SK84C M6GDIODE SCHOTTKY 40V 8A DO214AB Taiwan Semiconductor Corporation |
3,245 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
JANTX1N6643DIODE GEN PURP 50V 300MA MACOM Technology Solutions |
3,914 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/578 & /609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 6 ns | 100 µA @ 50 V | 50 V | 300mA (DC) | -65°C ~ 175°C | 1.2 V @ 100 mA |
|
|
ES1DL MQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,832 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1JL MTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,421 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
IDC73D120T6MX1SA2DIODE GEN PURP 1.2KV 150A WAFER Infineon Technologies |
3,610 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 26 µA @ 1200 V | 1200 V | 150A | -40°C ~ 175°C | 2.05 V @ 150 A | |
|
|
HS2BA M2GDIODE GEN PURP 100V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,784 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
SK84CHM6GDIODE SCHOTTKY 40V 8A DO214AB Taiwan Semiconductor Corporation |
2,092 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
|
|
JANTXV1N4148UR-1DIODE GEN PURP 75V 200MA DO213AA MACOM Technology Solutions |
3,109 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/116 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Discontinued at Digi-Key | Surface Mount | - | 5 ns | 500 nA @ 75 V | 75 V | 200mA (DC) | -65°C ~ 175°C | 1.2 V @ 50 mA |
|
|
ES1DL MTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,270 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1JL RQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,021 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SIDC06D120H8X1SA2DIODE GEN PURP 1.2KV 7.5A WAFER Infineon Technologies |
3,295 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 7.5A (DC) | -40°C ~ 175°C | 1.97 V @ 7.5 A | |
|
HS3AB M4GDIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation |
3,410 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
SK85C M6GDIODE SCHOTTKY 50V 8A DO214AB Taiwan Semiconductor Corporation |
3,167 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 750 mV @ 8 A | |
|
JANTXV1N6643USDIODE GEN PURP 50V 300MA D-5D MACOM Technology Solutions |
3,606 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/578 & /609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 6 ns | 100 µA @ 100 V | 50 V | 300mA (DC) | -65°C ~ 175°C | 1.2 V @ 100 mA |
|
|
ES1DL RQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,526 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1JL RTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,814 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |