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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK810C M6GDIODE SCHOTTKY 100V 8A DO214AB Taiwan Semiconductor Corporation |
2,492 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 900 mV @ 8 A | |
|
ES1CL RQGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,153 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
VS-STD170M12MPBFMODULE DIODE 1200V 170A MAGNAPAK Vishay General Semiconductor - Diodes Division |
3,287 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
HS1FL RTGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
3,975 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
IDC08D120T6MX1SA2DIODE GEN PURP 1.2KV 10A WAFER Infineon Technologies |
2,018 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 2.7 µA @ 1200 V | 1200 V | 10A | -40°C ~ 175°C | 2.05 V @ 10 A | |
|
|
HS1KL MHGDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
2,161 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
SK810CHM6GDIODE SCHOTTKY 100V 8A DO214AB Taiwan Semiconductor Corporation |
2,754 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 900 mV @ 8 A |
|
|
ES1CL RTGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,287 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
VS-STD250M12MPBFMODULE DIODE 1200V 250A MAGNAPAK Vishay General Semiconductor - Diodes Division |
2,173 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
HS1GL MQGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
3,001 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
IDC10D120T6MX1SA1DIODE GEN PURP 1.2KV 15A WAFER Infineon Technologies |
2,489 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 3.5 µA @ 1200 V | 1200 V | 15A | -40°C ~ 175°C | 2.05 V @ 15 A | |
|
|
HS1ML M2GDIODE GEN PURP 1A SUB SMA Taiwan Semiconductor Corporation |
3,443 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
STPS3H100AFYDIODE SCHOTTKY 100V 3A SOD128 STMicroelectronics |
3,412 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, ECOPACK®1 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 µA @ 100 V | 100 V | 3A | -40°C ~ 175°C | 760 mV @ 3 A |
|
RHRP860-F102DIODE GEN PURP 600V 8A TO220-2 onsemi |
3,975 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 100 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.1 V @ 8 A | |
|
|
SK82C M6GDIODE SCHOTTKY 20V 8A DO214AB Taiwan Semiconductor Corporation |
3,747 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
STTH60P03SWDIODE GEN PURP 300V 60A TO247-3 STMicroelectronics |
3,937 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 300 V | 300 V | 60A | 175°C (Max) | 1.5 V @ 30 A | |
|
SBM260VAL_R1_00001SOD-123FL, SKY Panjit International Inc. |
3,638 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 100pF @ 4V, 1MHz | - | 50 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 540 mV @ 2 A | |
|
SSA34HE3_A/HDIODE SCHOTTKY 40V 3A DO214AC Vishay General Semiconductor - Diodes Division |
2,266 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 3A | -65°C ~ 150°C | 490 mV @ 3 A |
|
|
RS1GL R3GDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,808 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
SDT5H100LP5-7DIODE SCHOTTKY 100V 5A POWERDI5 Diodes Incorporated |
2,413 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3.5 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 660 mV @ 5 A |
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