| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ES1CLHMQGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,405 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
HS1GL MTGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,783 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
IDC15D120T6MX1SA2DIODE GEN PURP 1.2KV 25A WAFER Infineon Technologies |
2,699 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 5.2 µA @ 1200 V | 1200 V | 25A | -40°C ~ 175°C | 2.05 V @ 25 A | |
|
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FES8JT-E3/45DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,402 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A | |
|
|
HS1ML MHGDIODE GEN PURP 1A SUB SMA Taiwan Semiconductor Corporation |
3,148 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SK82CHM6GDIODE SCHOTTKY 20V 8A DO214AB Taiwan Semiconductor Corporation |
3,642 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
|
VS-35APF06LHM3DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
3,269 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 35A | -40°C ~ 150°C | 1.46 V @ 35 A |
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ES1CLHMTGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,768 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
PG2010_R2_00001GLASS PASSIVATED JUNCTION PLASTI Panjit International Inc. |
3,107 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | ||
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BYG10Y-E3/TR3DIODE AVALANCHE 1.6KV 1.5A Vishay General Semiconductor - Diodes Division |
3,725 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1600 V | 1600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
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RSFAL R3GDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
3,307 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
HS1GL RQGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,912 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
IDC28D120T6MX1SA2DIODE GEN PURP 1.2KV 50A WAFER Infineon Technologies |
2,255 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 10 µA @ 1200 V | 1200 V | 50A | -40°C ~ 175°C | 2.05 V @ 50 A | |
|
HS2A M4GDIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation |
2,539 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
SK83C M6GDIODE SCHOTTKY 30V 8A DO214AB Taiwan Semiconductor Corporation |
3,932 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
|
ES1CLHRQGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,041 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
HS1GL RTGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,412 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
IDC40D120T6MX1SA4DIODE GEN PURP 1.2KV 75A WAFER Infineon Technologies |
3,935 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 14 µA @ 1200 V | 1200 V | 75A | -40°C ~ 175°C | 2.05 V @ 75 A | |
|
|
HS2AA M2GDIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,440 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
SK83CHM6GDIODE SCHOTTKY 30V 8A DO214AB Taiwan Semiconductor Corporation |
2,397 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |