| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS35 M6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,586 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
RL106TADIODE GEN PURP 800V 1A A-405 SMC Diode Solutions |
2,833 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SS13LHRFGDIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation |
2,406 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
|
|
RS1ALHRTGDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
3,531 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
IRD3CH16DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,438 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
RS1DLHMHGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,595 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
SS35HM6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,661 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
|
RL107TADIODE GEN PURP 1KV 1A A-405 SMC Diode Solutions |
2,519 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
S2B_R1_00001SURFACE MOUNT RECTIFIER Panjit International Inc. |
3,992 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | - | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | ||
|
RB160MM-90TFTRRB160MM-90TF IS THE HIGH RELIABI Rohm Semiconductor |
2,422 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1A | 150°C (Max) | 730 mV @ 1 A |
|
|
STTH3R06UFYDIODE GEN PURP 600V 3A SMBFLAT STMicroelectronics |
2,137 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, ECOPACK®2 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 3 µA @ 600 V | 600 V | 3A | -40°C ~ 175°C | 1.9 V @ 3 A |
|
RB050LAM-40TFTRDIODE SCHOTTKY 40V 3A PMDTM Rohm Semiconductor |
3,416 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 3A | 150°C (Max) | 550 mV @ 3 A |
|
|
SS14HR3GDIODE SCHOTTKY 40V 1A DO214AC Taiwan Semiconductor Corporation |
2,614 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
|
|
STBR6012WYDIODE GEN PURP 1.2KV 60A DO247 STMicroelectronics |
2,672 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101, ECOPACK®2 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1200 V | 1200 V | 60A | -40°C ~ 175°C | 1.3 V @ 60 A |
|
|
RS1BL MQGDIODE GEN PURP 100V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,514 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
1N5819HWQ-7-FSCHOTTKY RECTIFIER SOD123 Diodes Incorporated |
3,110 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 450 mV @ 1 A |
|
IRD3CH16DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,725 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
EGL41G-E3/96DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,534 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
|
RS1GL M2GDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,085 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
RGP02-16E-E3/73DIODE GEN PURP 1.6KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
2,339 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 1600 V | 1600 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |