| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RL101TADIODE GEN PURP 50V 1A A-405 SMC Diode Solutions |
3,663 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SS12L RFGDIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation |
2,724 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A | |
|
|
RS1AL RQGDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
2,629 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
IRD3CH101DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,974 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
RS1BLHM2GDIODE GEN PURP 100V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,985 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
SS33 M6GDIODE SCHOTTKY 30V 3A DO214AB Taiwan Semiconductor Corporation |
4,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
RL102TADIODE GEN PURP 100V 1A A-405 SMC Diode Solutions |
3,046 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SS12LHRFGDIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation |
3,228 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A |
|
|
RS1AL RTGDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
3,003 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
IRD3CH11DB6DIODE GEN PURP 1.2KV 25A DIE Infineon Technologies |
3,331 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 190 ns | 700 nA @ 1200 V | 1200 V | 25A | -40°C ~ 150°C | 2.7 V @ 25 A | |
|
|
RS1BLHMHGDIODE GEN PURP 100V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,648 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
S5KC-13-FDIODE GEN PURP 800V 5A SMC Diodes Incorporated |
3,209 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 5A | -65°C ~ 150°C | 1.15 V @ 5 A | |
|
CUDD8-02 TR13 PBFREEDIODE GEN PURP 200V 8A D2PAK Central Semiconductor Corp |
2,973 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
|
C3D08060GDIODE SCHOTTKY 600V 8A TO263-2 Wolfspeed, Inc. |
2,365 | - |
RFQ |
Datasheet |
Tube | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 441pF @ 0V, 1MHz | 0 ns | 50 µA @ 600 V | 600 V | 24A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A |
|
SS2040HE_R1_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
3,453 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 300pF @ 0V, 1MHz | - | 100 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A | ||
|
BYM12-100-E3/96DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,170 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
V8PM10S-M3/HDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,491 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 860pF @ 4V, 1MHz | - | 200 µA @ 100 V | 100 V | 8A | -40°C ~ 175°C | 780 mV @ 8 A |
|
CMDSH-4E TR PBFREEDIODE SCHOTTKY 40V 200MA SOD323 Central Semiconductor Corp |
15,520 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 40 V | 200mA | -65°C ~ 150°C | 1 V @ 200 mA | |
|
STPSC6H065BY-TRAUTOMOTIVE 650 V POWER SCHOTTKY STMicroelectronics |
2,790 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 0V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 6A | -40°C ~ 175°C | - |
|
SCS205KGC17DIODE SCHOTTKY 1.2KV 5A TO220AC Rohm Semiconductor |
3,943 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 270pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 5A (DC) | 175°C | 1.6 V @ 5 A |