| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS16L RFGDIODE SCHOTTKY 60V 1A SUB SMA Taiwan Semiconductor Corporation |
3,571 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
RS1KL MHGDIODE GEN PURP 800V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,814 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
RS1DL MTGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,357 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
SSL34HM6GDIODE SCHOTTKY 40V 3A DO214AB Taiwan Semiconductor Corporation |
2,345 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 410 mV @ 3 A |
|
FR603DIODE GEN PURP 200V 6A R-6 SMC Diode Solutions |
2,652 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 6A | -65°C ~ 125°C | 1.2 V @ 6 A | |
|
IRD3CH42DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,226 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
SS16LHRFGDIODE SCHOTTKY 60V 1A SUB SMA Taiwan Semiconductor Corporation |
3,173 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A |
|
|
RS1KLHM2GDIODE GEN PURP 800V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,188 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
|
RS1DL RQGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,420 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
GPAS1001 MNGDIODE GEN PURP 50V 10A TO263AB Taiwan Semiconductor Corporation |
2,537 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
FR604DIODE GEN PURP 400V 6A R-6 SMC Diode Solutions |
3,427 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 6A | -65°C ~ 125°C | 1.2 V @ 6 A | |
|
IRD3CH53DB6DIODE GEN PURP 1.2KV 100A DIE Infineon Technologies |
3,520 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 270 ns | 2 µA @ 1200 V | 1200 V | 100A | -40°C ~ 150°C | 2.7 V @ 100 A | |
|
|
SS19HR3GDIODE SCHOTTKY 90V 1A DO214AC Taiwan Semiconductor Corporation |
3,323 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
|
RS1KLHMHGDIODE GEN PURP 800V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,052 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
|
RS1DL RTGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,292 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
GPAS1002 MNGDIODE GEN PURP 100V 10A TO263AB Taiwan Semiconductor Corporation |
3,305 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
NRVBAF360T3GDIODE SCHOTTKY 60V 4A SMA-FL onsemi |
3,735 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 60 V | 60 V | 4A | -65°C ~ 150°C | 630 mV @ 3 A |
|
RGF1M-E3/67ADIODE GEN PURP 1KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,508 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
PG202_R2_00001GLASS PASSIVATED JUNCTION PLASTI Panjit International Inc. |
2,335 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | ||
|
MUR260K_AY_00001SUPERFAST RECOVERY RECTIFIERS Panjit International Inc. |
3,149 | - |
RFQ |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.35 V @ 2 A |