| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GPAS1004 MNGDIODE GEN PURP 400V 10A TO263AB Taiwan Semiconductor Corporation |
3,160 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
SBA140Q_R1_00001DFN1610-2L, SKY Panjit International Inc. |
3,759 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 510 mV @ 1 A | |
|
FR607DIODE GEN PURP 1KV 6A R-6 SMC Diode Solutions |
2,521 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 500 ns | 10 µA @ 1000 V | 1000 V | 6A | -65°C ~ 125°C | 1.2 V @ 6 A | |
|
SBA230AL_R1_00001SOD-123FL, SKY Panjit International Inc. |
3,740 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 490 mV @ 2 A | |
|
IRD3CH5BD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,123 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
1MD2_FDH3369CDIODE-GENERAL PURPOSE VR-180V Rochester Electronics, LLC |
3,051 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
SS210HR5GDIODE SCHOTTKY 100V 2A DO214AA Taiwan Semiconductor Corporation |
2,052 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
|
|
RS1ML R3GDIODE GEN PURP 1KV 800MA SUB SMA Taiwan Semiconductor Corporation |
3,980 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
RS2A M4GDIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation |
2,890 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
SS5P10-M3/87ADIODE SCHOTTKY 100V 5A TO277A Vishay General Semiconductor - Diodes Division |
3,562 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 15 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 880 mV @ 5 A |
|
BR28_R1_00001MINI SURFACE MOUNT SCHOTTKY BARR Panjit International Inc. |
2,745 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 80 V | 80 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A | ||
|
|
RS1DLHRQGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,296 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
1A1TADIODE GEN PURP 50V 1A R-1 SMC Diode Solutions |
2,812 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 125°C | 1 V @ 1 A | |
|
GPAS1006 MNGDIODE GEN PURP 800V 10A TO263AB Taiwan Semiconductor Corporation |
3,168 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
IRD3CH5DB6DIODE GEN PURP 1.2KV 5A DIE Infineon Technologies |
3,406 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 96 ns | 100 nA @ 1200 V | 1200 V | 5A | -40°C ~ 150°C | 2.7 V @ 5 A | |
|
|
SS210L R3GDIODE SCHOTTKY 100V 2A SUB SMA Taiwan Semiconductor Corporation |
3,526 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
|
|
RS2AA M2GDIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,411 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
RS1DLHRTGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,477 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
1A2TADIODE GEN PURP 100V 1A R-1 SMC Diode Solutions |
2,151 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 125°C | 1 V @ 1 A | |
|
GPAS1007 MNGDIODE GEN PURP 10A TO263AB Taiwan Semiconductor Corporation |
3,325 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 10A | -55°C ~ 150°C | 1.1 V @ 10 A |