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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RS1GL MTGDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,447 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
1A4TADIODE GEN PURP 400V 1A R-1 SMC Diode Solutions |
2,410 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 125°C | 1 V @ 1 A | |
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|
MBRS10150 MNGDIODE SCHOTTKY 150V 10A TO263AB Taiwan Semiconductor Corporation |
2,709 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 175°C | - | |
|
IRD3CH82DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,315 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
SS210LHRFGDIODE SCHOTTKY 100V 2A SUB SMA Taiwan Semiconductor Corporation |
3,449 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
|
RS2BAHM2GDIODE GEN PURP 100V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,299 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
|
RS1GL RQGDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,147 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
1A5TADIODE GEN PURP 600V 1A R-1 SMC Diode Solutions |
2,837 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 125°C | 1 V @ 1 A | |
|
|
MBRS10150HMNGDIODE SCHOTTKY 150V 10A TO263AB Taiwan Semiconductor Corporation |
2,746 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 175°C | - |
|
|
IRD3CH9DB6DIODE GEN PURP 1.2KV 10A DIE Infineon Technologies |
3,219 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 154 ns | 200 nA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 2.7 V @ 10 A | |
|
SS215 R5GDIODE SCHOTTKY 150V 2A DO214AA Taiwan Semiconductor Corporation |
3,855 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
RSFAL M2GDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
3,620 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
RS1GL RTGDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,534 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
1A6TADIODE GEN PURP 800V 1A R-1 SMC Diode Solutions |
3,811 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 125°C | 1 V @ 1 A | |
|
|
MBRS1035 MNGDIODE SCHOTTKY 35V 10A TO263AB Taiwan Semiconductor Corporation |
3,453 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 840 mV @ 10 A | |
|
|
IRD3CH9DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,832 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
SS215HR5GDIODE SCHOTTKY 150V 2A DO214AA Taiwan Semiconductor Corporation |
2,800 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
RSFAL MHGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
2,506 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
RS1GLHMQGDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,129 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
1N4001TADIODE GEN PURP 50V 1A DO41 SMC Diode Solutions |
3,125 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 125°C | 1 V @ 1 A |
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