| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SB330_R2_00001SCHOTTKY BARRIER RECTIFIERS Panjit International Inc. |
2,228 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | ||
|
PG201R_R2_00001GLASS PASSIVATED JUNCTION FAST S Panjit International Inc. |
3,210 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 150 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | ||
|
CDBFN140-HFDIODE SCHOTTKY 40V 1A SOD323 Comchip Technology |
3,364 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A (DC) | -50°C ~ 125°C | 550 mV @ 1 A | |
|
MMBD1202RECTIFIER DIODE, 0.2A, 100V Rochester Electronics, LLC |
3,192 | - |
RFQ |
Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 25 nA @ 100 V | 100 V | 200mA | 150°C (Max) | 1 V @ 200 mA | |
|
1N4004GP-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,868 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
R3000DIODE GEN PURP 3000V 200A DO15 Rectron USA |
3,764 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 3000 V | 3000 V | 200mA | -55°C ~ 150°C | 4 V @ 200 mA | |
|
SB320_R2_00001SCHOTTKY BARRIER RECTIFIERS Panjit International Inc. |
3,216 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | ||
|
PG204R_R2_00001GLASS PASSIVATED JUNCTION FAST S Panjit International Inc. |
2,789 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 150 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | ||
|
RB160LAM-90TRDIODE SCHOTTKY 90V 1A PMDTM Rohm Semiconductor |
3,436 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1A | 150°C (Max) | 730 mV @ 1 A | |
|
SMBD1042LT1SS SOT23 DUAL DIO SPCL Rochester Electronics, LLC |
2,296 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
1N4007GP-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,112 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A |
|
R2500DIODE GEN PURP 2500V 200A DO15 Rectron USA |
2,673 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 2500 V | 2500 V | 200mA | -55°C ~ 150°C | 3 V @ 200 mA | |
|
MBR315AFC_R1_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
2,030 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 10pF @ 4V, 1MHz | - | 50 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | ||
|
PG202R_R2_00001GLASS PASSIVATED JUNCTION FAST S Panjit International Inc. |
2,130 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 150 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | ||
|
|
RS1ML RVGDIODE GEN PURP 1KV 800MA SUB SMA Taiwan Semiconductor Corporation |
2,338 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
MMSD459ARECTIFIER DIODE, 0.2A, 100V Rochester Electronics, LLC |
2,561 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | - | - | 150°C (Max) | - | |
|
GP10Y-E3/54DIODE GEN PURP 1.6KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,414 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1600 V | 1600 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
|
SK13F_R1_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
2,387 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 4V, 1MHz | - | 100 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 500 mV @ 1 A | ||
|
SB32AFC_R1_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
2,695 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 485pF @ 0V, 1MHz | - | 100 µA @ 20 V | 20 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A | ||
|
NSD914F3T5GDIODE GP 100V 200MA SOT1123 onsemi |
2,312 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA (DC) | -55°C ~ 150°C | 1 V @ 10 mA |