| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SSL34 R7GDIODE SCHOTTKY 40V 3A DO214AB Taiwan Semiconductor Corporation |
3,120 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 410 mV @ 3 A | |
|
SK54B R5GDIODE SCHOTTKY 40V 5A DO214AA Taiwan Semiconductor Corporation |
2,017 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |
|
TSOD1F2HM RVGDIODE GEN PURP 200V 1A SOD123FL Taiwan Semiconductor Corporation |
2,725 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SD930-BDIODE SCHOTTKY 30V 9A DO201AD Diodes Incorporated |
3,572 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 900pF @ 4V, 1MHz | - | 800 µA @ 30 V | 30 V | 9A | -65°C ~ 150°C | 570 mV @ 18 A | |
|
SB540-BDIODE SCHOTTKY 40V 5A DO201AD Diodes Incorporated |
3,688 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 125°C | 550 mV @ 5 A | |
|
GPA806 C0GDIODE GEN PURP 800V 8A TO220AC Taiwan Semiconductor Corporation |
3,724 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
SSL34HR7GDIODE SCHOTTKY 40V 3A DO214AB Taiwan Semiconductor Corporation |
3,555 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 410 mV @ 3 A |
|
SK54BHR5GDIODE SCHOTTKY 40V 5A DO214AA Taiwan Semiconductor Corporation |
2,602 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A |
|
TSOD1F4HM RVGDIODE GEN PURP 400V 1A SOD123FL Taiwan Semiconductor Corporation |
2,344 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SD940-BDIODE SCHOTTKY 40V 9A DO201AD Diodes Incorporated |
3,914 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 900pF @ 4V, 1MHz | - | 800 µA @ 40 V | 40 V | 9A | -65°C ~ 150°C | 570 mV @ 18 A | |
|
SB550-BDIODE SCHOTTKY 50V 5A DO201AD Diodes Incorporated |
2,540 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A | -65°C ~ 150°C | 670 mV @ 5 A | |
|
GPA806HC0GDIODE GEN PURP 800V 8A TO220AC Taiwan Semiconductor Corporation |
2,957 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
MSS1P3LHM3_A/HDIODE SCHOTTKY 30V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
2,187 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 65pF @ 4V, 1MHz | - | 250 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 500 mV @ 1 A |
|
QR606F_T0_00001PLANAR STRUCTURED SUPERFAST RECO Panjit International Inc. |
2,604 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 3 µA @ 600 V | 600 V | 6A | -55°C ~ 175°C | 1.45 V @ 6 A | ||
|
ED506S_L2_00001SUPERFAST RECOVERY RECTIFIERS Panjit International Inc. |
2,460 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 1 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.7 V @ 5 A | ||
|
MBR15U45HE3-TPSCHOTTKY BARRIER RECTIFIERS 45V Micro Commercial Co |
2,486 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 750 mV @ 15 A |
|
UF2G_R1_00001SMB, ULTRA Panjit International Inc. |
3,052 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 50 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
RB421DT146DIODE SCHOTTKY 40V 100MA SMD3 Rohm Semiconductor |
3,596 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 6pF @ 10V, 1MHz | - | 30 µA @ 10 V | 40 V | 100mA | 125°C (Max) | 550 mV @ 100 mA | |
|
MSS2P2HM3_A/HDIODE SCHOTTKY 20V 2A MICROSMP Vishay General Semiconductor - Diodes Division |
3,801 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 65pF @ 4V, 1MHz | - | 250 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 600 mV @ 2 A |
|
ER801_T0_00001SUPERFAST RECOVERY RECTIFIERS Panjit International Inc. |
3,850 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 1 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |