| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH10G65C5ZXKSA2DIODE SCHOTTKY 650V 10A TO220-2 Infineon Technologies |
3,042 | - |
RFQ |
Datasheet |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
SFT13G A0GDIODE GEN PURP 150V 1A TS-1 Taiwan Semiconductor Corporation |
3,136 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
MBR10150 C0GDIODE GEN PURP 150V 10A TO220AC Taiwan Semiconductor Corporation |
2,555 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.05 V @ 10 A | |
|
|
SS12LHMHGDIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation |
3,365 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A |
|
BA159GHA0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
3,161 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
MBRF16100 C0GDIODE SCHOTTKY 100V 16A ITO220AC Taiwan Semiconductor Corporation |
3,710 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 300 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 850 mV @ 16 A | |
|
IDH10G65C5ZXKSA1DIODE SCHOTTKY 650V 10A TO220-2 Rochester Electronics, LLC |
3,066 | - |
RFQ |
Datasheet |
Bulk,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 180 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
SFT13GHA0GDIODE GEN PURP 150V 1A TS-1 Taiwan Semiconductor Corporation |
2,199 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
MBR10150HC0GDIODE GEN PURP 150V 10A TO220AC Taiwan Semiconductor Corporation |
3,799 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.05 V @ 10 A |
|
|
SS13L M2GDIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation |
2,398 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
BAT42 A0GDIODE SCHOTTKY 30V 200MA DO35 Taiwan Semiconductor Corporation |
2,592 | - |
RFQ |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Through Hole | 7pF @ 1V, 1MHz | 5 ns | 100 nA @ 25 V | 30 V | 200mA | -65°C ~ 125°C | 650 mV @ 50 mA | ||
|
MBRF16100HC0GDIODE SCHOTTKY 100V 16A ITO220AC Taiwan Semiconductor Corporation |
3,768 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 300 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 850 mV @ 16 A |
|
IDT04S60CHKSA1DIODE SCHOTTKY 600V TO220-2 Infineon Technologies |
3,064 | - |
RFQ |
Datasheet |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
SFT14G A0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
2,017 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
MBR10200 C0GDIODE GEN PURP 200V 10A TO220AC Taiwan Semiconductor Corporation |
2,893 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 200 V | 200 V | 10A | -55°C ~ 150°C | 1.05 V @ 10 A | |
|
|
VS-STPS20L15D-M3DIODE SCHOTTKY 15V 20A TO220AC Vishay General Semiconductor - Diodes Division |
996 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 2000pF @ 5V, 1MHz | - | 10 mA @ 15 V | 15 V | 20A | -55°C ~ 125°C | 520 mV @ 40 A | |
|
VS-45EPS12LHM3DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
2,293 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 45A | -40°C ~ 150°C | 1.14 V @ 45 A |
|
UF1JF_R1_00001SURFACE MOUNT ULTRA FAST RECTIFI Panjit International Inc. |
2,463 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 100 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | ||
|
SR104-TPDIODE SCHOTTKY 1A DO-41 Micro Commercial Co |
2,956 | - |
RFQ |
- | RoHS | - | - | Last Time Buy | - | - | - | - | - | - | - | - | ||
|
SB1045_T0_00001SCHOTTKY BARRIER RECTIFIER Panjit International Inc. |
3,390 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 550 mV @ 10 A |