| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYC20D-600PQRECTIFIER DIODE Rochester Electronics, LLC |
3,479 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 20 ns | 10 µA @ 600 V | 600 V | 20A | 175°C (Max) | 2.9 V @ 20 A | |
|
DSEI30-12ADIODE GEN PURP 1.2KV 26A TO247AD IXYS |
2,797 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 750 µA @ 1200 V | 1200 V | 26A | -40°C ~ 150°C | 2.55 V @ 30 A | |
|
SD840S_S2_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
3,550 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | ||
|
MBRF10100-E3/4WDIODE SCHOTTKY 100V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
3,358 | - |
RFQ |
Datasheet |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
SBT5100LSS_AY_00001ULTRA LOW VF SCHOTTKY RECTIFIER Panjit International Inc. |
2,140 | - |
RFQ |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 20 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 700 mV @ 5 A | ||
|
RL106GP-TPDIODE RECTUFUER 1A A-405 Micro Commercial Co |
2,624 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | - | 800 V | 1A | -55°C ~ 150°C | - | |
|
BA157GHA0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,613 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
MBRF1060HC0GDIODE SCHOTTKY 60V 10A ITO220AC Taiwan Semiconductor Corporation |
2,020 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 800 mV @ 10 A |
|
ER1006F_T0_00001ITO-220AC, SUPER Panjit International Inc. |
2,702 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 62pF @ 4V, 1MHz | 50 ns | 1 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
DSA1-12DDIODE AVALANCHE 1.2KV 2.3A IXYS |
2,608 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | - | 700 µA @ 1200 V | 1200 V | 2.3A | -40°C ~ 150°C | 1.34 V @ 7 A | |
|
SD830S_S2_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
3,636 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | ||
|
STTH802FPDIODE GEN PURP 200V 8A TO220FP STMicroelectronics |
2,076 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 6 µA @ 200 V | 200 V | 8A | 175°C (Max) | 1.05 V @ 8 A | |
|
R5000FDIODE GEN PURP 5000V 200MA DO15 Rectron USA |
3,471 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 500 ns | 5 µA @ 5000 V | 5000 V | 200mA | -55°C ~ 150°C | 6.5 V @ 200 mA | |
|
|
NXPSC08650QDIODE SCHOTTKY 650V 8A TO220AC WeEn Semiconductors |
3,263 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
RL107GP-TPDIODE RECTUFUER 1A A-405 Micro Commercial Co |
3,128 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | - | 1000 V | 1A | -55°C ~ 150°C | - | |
|
SFT12G A0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
2,256 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
SBM1060L_T0_00001ULTRA LOW VF SCHOTTKY RECTIFIER Panjit International Inc. |
3,228 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 480pF @ 4V, 1MHz | - | 220 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 570 mV @ 10 A | ||
|
HERAF807G C0GDIODE GEN PURP 800V 8A ITO220AC Taiwan Semiconductor Corporation |
3,490 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
STTH3010WDIODE GEN PURP 1KV 30A DO247 STMicroelectronics |
2,757 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 15 µA @ 1000 V | 1000 V | 30A | 175°C (Max) | 2 V @ 30 A | |
|
BD860S_L2_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
2,100 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 60 V | 60 V | 8A | -65°C ~ 175°C | 750 mV @ 8 A |