| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK32_R1_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
3,618 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | ||
|
RUR3090RECTIFIER DIODE, 30A, 900V Rochester Electronics, LLC |
2,531 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 150 ns | 100 µA @ 900 V | 900 V | 30A | -65°C ~ 175°C | 1.8 V @ 30 A | |
|
STTH1512WDIODE GEN PURP 1.2KV 15A DO247 STMicroelectronics |
3,801 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 105 ns | 15 µA @ 1200 V | 1200 V | 15A | 175°C (Max) | 2.1 V @ 15 A | |
|
BD5100S_S2_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
3,412 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 100 V | 100 V | 5A | -65°C ~ 175°C | 800 mV @ 5 A | ||
|
FSU05D60DIODE FAST RECOVERY 600V 5A TO-2 KYOCERA AVX |
2,905 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 175°C | 2.3 V @ 5 A | |
|
MBR845_T0_00001SCHOTTKY BARRIER RECTIFIERS Panjit International Inc. |
3,657 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 50 µA @ 45 V | 45 V | 8A | -65°C ~ 175°C | 700 mV @ 8 A | ||
|
SK33_R1_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
2,048 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | ||
|
MBRF1035HC0GDIODE SCHOTTKY 35V 10A ITO220AC Taiwan Semiconductor Corporation |
3,171 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 35 V | 35 V | 10A | -55°C ~ 150°C | 700 mV @ 10 A |
|
N6270DDIODE Diodes Incorporated |
3,460 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
UF1506S-BDIODE GEN PURP 800V 1.5A DO41 Diodes Incorporated |
3,784 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1.5A | -65°C ~ 150°C | 1.7 V @ 1.5 A | |
|
SF66GHA0GDIODE GEN PURP 400V 6A DO201AD Taiwan Semiconductor Corporation |
2,544 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A |
|
HERAF801G C0GDIODE GEN PURP 50V 8A ITO220AC Taiwan Semiconductor Corporation |
3,366 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
|
1N5817HA0GDIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation |
3,198 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A |
|
MBRF1045 C0GDIODE SCHOTTKY 45V 10A ITO220AC Taiwan Semiconductor Corporation |
3,894 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 700 mV @ 10 A | |
|
N7056ADIODE Diodes Incorporated |
3,876 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
IDC08S120EX1SA3DIODE SCHOTTKY 1.2KV 7.5A WAFER Infineon Technologies |
3,696 | - |
RFQ |
Datasheet |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 380pF @ 1V, 1MHz | 0 ns | 180 µA @ 1200 V | 1200 V | 7.5A (DC) | -55°C ~ 175°C | 1.8 V @ 7.5 A |
|
SF67G A0GDIODE GEN PURP 500V 6A DO201AD Taiwan Semiconductor Corporation |
2,852 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 6A | -55°C ~ 150°C | 1.7 V @ 6 A | |
|
HERAF802G C0GDIODE GEN PURP 100V 8A ITO220AC Taiwan Semiconductor Corporation |
3,172 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
|
1N5818 A0GDIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation |
3,303 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
MBRF1045HC0GDIODE SCHOTTKY 45V 10A ITO220AC Taiwan Semiconductor Corporation |
3,002 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 700 mV @ 10 A |