More product categories >>

Diodes-Rectifiers-Single

Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
MBRF10200HC0G DIODE SCHOTTKY 200V 10A ITO220AC Taiwan Semiconductor Corporation	2,442	-	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	10A	-55°C ~ 150°C	1.05 V @ 10 A
1N4936GHA0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	2,334	-	RFQ	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
N6180D DIODE Diodes Incorporated	2,346	-	RFQ		Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
UF1504S-B DIODE GEN PURP 400V 1.5A DO41 Diodes Incorporated	2,726	-	RFQ	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1.5A	-65°C ~ 150°C	1.3 V @ 1.5 A
SF65G A0G DIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation	2,592	-	RFQ	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	6A	-55°C ~ 150°C	1.3 V @ 6 A
HERAF1604G C0G DIODE GEN PURP 300V 16A ITO220AC Taiwan Semiconductor Corporation	2,781	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	150pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1 V @ 16 A
MBRF1035 C0G DIODE SCHOTTKY 35V 10A ITO220AC Taiwan Semiconductor Corporation	2,129	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 35 V	35 V	10A	-55°C ~ 150°C	700 mV @ 10 A
1N4937G A0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	2,301	-	RFQ	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
N6200D DIODE Diodes Incorporated	3,120	-	RFQ		Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
UF1505S-B DIODE GEN PURP 600V 1.5A DO41 Diodes Incorporated	2,695	-	RFQ	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	20pF @ 4V, 1MHz	75 ns	5 µA @ 600 V	600 V	1.5A	-65°C ~ 150°C	1.7 V @ 1.5 A
SF65GHA0G DIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation	2,116	-	RFQ	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	6A	-55°C ~ 150°C	1.3 V @ 6 A
HERAF1605G C0G DIODE GEN PURP 400V 16A ITO220AC Taiwan Semiconductor Corporation	2,496	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	150pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	16A	-55°C ~ 150°C	1.3 V @ 16 A
1N4937GHA0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	2,132	-	RFQ	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
FFSB2065B-F085 SIC DIODE 650V onsemi	3,089	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	866pF @ 1V, 100kHz	0 ns	40 µA @ 650 V	650 V	20A	-55°C ~ 175°C	1.7 V @ 20 A
MBR10200_T0_00001 10 AMPERES SCHOTTKY BARRIER RECT Panjit International Inc.	2,040	-	RFQ		Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	50 µA @ 200 V	200 V	10A	-65°C ~ 175°C	900 mV @ 10 A
GI752 R- 200 PRV 6A NTE Electronics, Inc	2,930	-	RFQ	Datasheet	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	150pF @ 4V, 1MHz	2.5 µs	5 µA @ 200 V	200 V	6A	-65°C ~ 175°C	900 mV @ 6 A
PG5407_R2_00001 GLASS PASSIVATED JUNCTION PLASTI Panjit International Inc.	2,531	-	RFQ		Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	1 µA @ 800 V	800 V	3A	-55°C ~ 150°C	1.2 V @ 3 A
MBR1060F_T0_00001 10 AMPERES SCHOTTKY BARRIER RECT Panjit International Inc.	3,867	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	50 µA @ 60 V	60 V	10A	-65°C ~ 175°C	750 mV @ 10 A
STPSC8H065D DIODE SCHOTTKY 650V 8A TO220AC STMicroelectronics	3,739	-	RFQ	Datasheet	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	414pF @ 0V, 1MHz	0 ns	80 µA @ 650 V	650 V	8A	-40°C ~ 175°C	1.75 V @ 8 A
MBR10150_T0_00001 10 AMPERES SCHOTTKY BARRIER RECT Panjit International Inc.	3,095	-	RFQ		Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	50 µA @ 150 V	150 V	10A	-65°C ~ 175°C	900 mV @ 10 A