| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4934G A0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,213 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
SD103BW-7-F-36DIODE SCHOTTKY 30V 350MA SOD123 Diodes Incorporated |
3,014 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 28pF @ 0V, 1MHz | 10 ns | 5 µA @ 20 V | 30 V | 350mA (DC) | -55°C ~ 150°C | 600 mV @ 200 mA | ||
|
SF30HG-BDIODE GEN PURP 500V 3A DO201AD Diodes Incorporated |
3,434 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 500 V | 500 V | 3A | -65°C ~ 150°C | 1.5 V @ 3 A | |
|
HERAF1007G C0GDIODE GEN PURP 800V 10A ITO220AC Taiwan Semiconductor Corporation |
2,124 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 800 V | 800 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
MBR790HC0GDIODE SCHOTTKY 90V 7.5A TO220AC Taiwan Semiconductor Corporation |
2,321 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 7.5A | -55°C ~ 150°C | 920 mV @ 7.5 A |
|
1N4934GHA0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,232 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
Z7130ADIODE SCHOTTKY 30A SOD323 Diodes Incorporated |
3,196 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
SF30JG-BDIODE GEN PURP 600V 3A DO201AD Diodes Incorporated |
2,283 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 150°C | 1.5 V @ 3 A | |
|
SF62GHA0GDIODE GEN PURP 100V 6A DO201AD Taiwan Semiconductor Corporation |
3,829 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A |
|
MURSD860A-TP8A/600V FRED RECTIFIERS,DPAK PAC Micro Commercial Co |
2,828 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 35pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.6 V @ 8 A | |
|
SB840F_T0_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
3,454 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 40 V | 40 V | 8A | -55°C ~ 150°C | 550 mV @ 8 A | ||
|
VSS8D2M6HM3/I2A, 60V, SLIMSMAW TRENCH SKY REC Vishay General Semiconductor - Diodes Division |
2,790 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 430pF @ 4V, 1MHz | - | 200 µA @ 60 V | 60 V | 2A | -40°C ~ 175°C | 480 mV @ 1 A |
|
BAS101,215DIODE GP 300V 200MA TO236AB Nexperia USA Inc. |
2,078 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 50 ns | 150 nA @ 250 V | 300 V | 200mA (DC) | 150°C (Max) | 1.1 V @ 100 mA | |
|
UF1001_T0_00001ULTRA FAST RECOVERY RECTIFIERS Panjit International Inc. |
3,585 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 1 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 1 V @ 10 A | ||
|
STTH30R04GDIODE GEN PURP 400V 30A D2PAK STMicroelectronics |
3,557 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 15 µA @ 400 V | 400 V | 30A | -40°C ~ 175°C | 1.45 V @ 30 A | |
|
PU6BCH25NS, 6A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
3,030 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 110pF @ 4V, 1MHz | 25 ns | 2 µA @ 100 V | 100 V | 6A (DC) | -55°C ~ 175°C | 940 mV @ 6 A | |
|
RUR1550RECTIFIER DIODE, 15A, 500V Rochester Electronics, LLC |
2,477 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 60 ns | 10 µA @ 500 V | 500 V | 15A | -55°C ~ 175°C | 1.5 V @ 15 A | |
|
VSS8D5M12-M3/I5A, 120V, SLIMSMAW TRENCH SKY Vishay General Semiconductor - Diodes Division |
3,298 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 460pF @ 4V, 1MHz | - | 350 µA @ 120 V | 100 V | 2.2A | -40°C ~ 175°C | 620 mV @ 2.5 A |
|
NSVBAS21SLT1GDIODE GEN PURP 250V 225MA SOT23 onsemi |
3,057 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 µA @ 200 V | 250 V | 225mA (DC) | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
SB820_T0_00001D PAK SURFACE MOUNT SCHOTTKY BAR Panjit International Inc. |
3,393 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 20 V | 20 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |