Diodes-Rectifiers-Single

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
QR606_T0_00001

QR606_T0_00001

PLANAR STRUCTURED SUPERFAST RECO

Panjit International Inc.
3,136 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 3 µA @ 600 V 600 V 6A -55°C ~ 175°C 1.45 V @ 6 A
HERAF1008G C0G

HERAF1008G C0G

DIODE GEN PURP 10A ITO220AC

Taiwan Semiconductor Corporation
2,297 -

RFQ

HERAF1008G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 80 ns 10 µA @ 1000 V - 10A -55°C ~ 150°C 1.7 V @ 10 A
MBRF10100HC0G

MBRF10100HC0G

DIODE SCHOTTKY 100V 10A ITO220AC

Taiwan Semiconductor Corporation
3,995 -

RFQ

MBRF10100HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 850 mV @ 10 A
1N4935G A0G

1N4935G A0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation
3,086 -

RFQ

1N4935G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.2 V @ 1 A
1N5817A-01

1N5817A-01

DIODE SCHOTTKY 20V 1A DO41

Diodes Incorporated
3,443 -

RFQ

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 110pF @ 4V, 1MHz - 1 mA @ 20 V 20 V 1A -65°C ~ 125°C 750 mV @ 3 A
UF1501S-B

UF1501S-B

DIODE GEN PURP 50V 1.5A DO41

Diodes Incorporated
3,958 -

RFQ

UF1501S-B

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1.5A -65°C ~ 150°C 1 V @ 1.5 A
SF63G A0G

SF63G A0G

DIODE GEN PURP 150V 6A DO201AD

Taiwan Semiconductor Corporation
3,463 -

RFQ

SF63G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1601G C0G

HERAF1601G C0G

DIODE GEN PURP 50V 16A ITO220AC

Taiwan Semiconductor Corporation
3,440 -

RFQ

HERAF1601G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF10150 C0G

MBRF10150 C0G

DIODE SCHOTTKY 150V 10A ITO220AC

Taiwan Semiconductor Corporation
2,811 -

RFQ

MBRF10150 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.05 V @ 10 A
1N4935GHA0G

1N4935GHA0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation
3,733 -

RFQ

1N4935GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.2 V @ 1 A
N6051D

N6051D

DIODE

Diodes Incorporated
2,234 -

RFQ

Bulk RoHS - - Obsolete - - - - - - - -
UF1502S-B

UF1502S-B

DIODE GEN PURP 100V 1.5A DO41

Diodes Incorporated
3,970 -

RFQ

UF1502S-B

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1.5A -65°C ~ 150°C 1 V @ 1.5 A
SF63GHA0G

SF63GHA0G

DIODE GEN PURP 150V 6A DO201AD

Taiwan Semiconductor Corporation
3,150 -

RFQ

SF63GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1602G C0G

HERAF1602G C0G

DIODE GEN PURP 100V 16A ITO220AC

Taiwan Semiconductor Corporation
3,839 -

RFQ

HERAF1602G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF10150HC0G

MBRF10150HC0G

DIODE SCHOTTKY 150V 10A ITO220AC

Taiwan Semiconductor Corporation
3,745 -

RFQ

MBRF10150HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.05 V @ 10 A
1N4936G A0G

1N4936G A0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation
3,208 -

RFQ

1N4936G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
N6075D

N6075D

DIODE

Diodes Incorporated
2,803 -

RFQ

Bulk RoHS - - Obsolete - - - - - - - -
UF1503S-B

UF1503S-B

DIODE GEN PURP 200V 1.5A DO41

Diodes Incorporated
2,394 -

RFQ

UF1503S-B

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1.5A -65°C ~ 150°C 1 V @ 1.5 A
SF64GHA0G

SF64GHA0G

DIODE GEN PURP 200V 6A DO201AD

Taiwan Semiconductor Corporation
3,562 -

RFQ

SF64GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1603G C0G

HERAF1603G C0G

DIODE GEN PURP 200V 16A ITO220AC

Taiwan Semiconductor Corporation
2,625 -

RFQ

HERAF1603G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 1 V @ 16 A
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