| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
QR606_T0_00001PLANAR STRUCTURED SUPERFAST RECO Panjit International Inc. |
3,136 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 3 µA @ 600 V | 600 V | 6A | -55°C ~ 175°C | 1.45 V @ 6 A | ||
|
HERAF1008G C0GDIODE GEN PURP 10A ITO220AC Taiwan Semiconductor Corporation |
2,297 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 1000 V | - | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
MBRF10100HC0GDIODE SCHOTTKY 100V 10A ITO220AC Taiwan Semiconductor Corporation |
3,995 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A |
|
1N4935G A0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,086 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
1N5817A-01DIODE SCHOTTKY 20V 1A DO41 Diodes Incorporated |
3,443 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 4V, 1MHz | - | 1 mA @ 20 V | 20 V | 1A | -65°C ~ 125°C | 750 mV @ 3 A | ||
|
UF1501S-BDIODE GEN PURP 50V 1.5A DO41 Diodes Incorporated |
3,958 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1.5A | -65°C ~ 150°C | 1 V @ 1.5 A | |
|
SF63G A0GDIODE GEN PURP 150V 6A DO201AD Taiwan Semiconductor Corporation |
3,463 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A | |
|
HERAF1601G C0GDIODE GEN PURP 50V 16A ITO220AC Taiwan Semiconductor Corporation |
3,440 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 1 V @ 16 A | |
|
MBRF10150 C0GDIODE SCHOTTKY 150V 10A ITO220AC Taiwan Semiconductor Corporation |
2,811 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.05 V @ 10 A | |
|
1N4935GHA0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,733 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
N6051DDIODE Diodes Incorporated |
2,234 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
UF1502S-BDIODE GEN PURP 100V 1.5A DO41 Diodes Incorporated |
3,970 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1.5A | -65°C ~ 150°C | 1 V @ 1.5 A | |
|
SF63GHA0GDIODE GEN PURP 150V 6A DO201AD Taiwan Semiconductor Corporation |
3,150 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A |
|
HERAF1602G C0GDIODE GEN PURP 100V 16A ITO220AC Taiwan Semiconductor Corporation |
3,839 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 1 V @ 16 A | |
|
MBRF10150HC0GDIODE SCHOTTKY 150V 10A ITO220AC Taiwan Semiconductor Corporation |
3,745 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.05 V @ 10 A |
|
1N4936G A0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,208 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
N6075DDIODE Diodes Incorporated |
2,803 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
UF1503S-BDIODE GEN PURP 200V 1.5A DO41 Diodes Incorporated |
2,394 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1.5A | -65°C ~ 150°C | 1 V @ 1.5 A | |
|
SF64GHA0GDIODE GEN PURP 200V 6A DO201AD Taiwan Semiconductor Corporation |
3,562 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A |
|
HERAF1603G C0GDIODE GEN PURP 200V 16A ITO220AC Taiwan Semiconductor Corporation |
2,625 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 16A | -55°C ~ 150°C | 1 V @ 16 A |