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Diodes-Rectifiers-Single

Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
BAT64W-7-F SCHOTTKY DIODE SOT323 Diodes Incorporated	2,342	-	RFQ	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	6pF @ 1V, 1MHz	3 ns	2 µA @ 40 V	40 V	250mA	-65°C ~ 150°C	750 mV @ 100 mA
NTE5815 R-600PRV 6A NTE Electronics, Inc	3,196	-	RFQ	Datasheet	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	150pF @ 4V, 1MHz	-	5 µA @ 600 V	600 V	6A	-50°C ~ 150°C	1 V @ 6 A
IDWD15G120C5XKSA1 SIC SCHOTTKY 1200V 15A TO247-2 Infineon Technologies	2,955	-	RFQ	Datasheet	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1050pF @ 1V, 1MHz	0 ns	124 µA @ 1200 V	1200 V	49A (DC)	-55°C ~ 175°C	1.65 V @ 15 A
BAT86S-TR DIODE SCHOTTKY 50V 200MA DO35 Vishay General Semiconductor - Diodes Division	3,187	-	RFQ	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Through Hole	8pF @ 1V, 1MHz	-	5 µA @ 40 V	50 V	200mA (DC)	125°C (Max)	900 mV @ 100 mA
S1M-M3/5AT DIODE GPP 1A 1000V DO-214AC Vishay General Semiconductor - Diodes Division	3,069	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	12pF @ 4V, 1MHz	1.8 µs	5 µA @ 1000 V	1000 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
DSEI25-06A POWER DIODE DISCRETES-FRED TO-22 IXYS	3,399	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 400V, 1MHz	50 ns	100 µA @ 600 V	600 V	25A	-40°C ~ 150°C	1.31 V @ 25 A
1N4151WS-G3-18 DIODE GEN PURP 50V 150MA SOD323 Vishay General Semiconductor - Diodes Division	3,786	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	4 ns	50 nA @ 50 V	50 V	150mA	-55°C ~ 150°C	1 V @ 50 mA
TRS6E65F,S1Q DODE SCHOTTKY 650V TO220 Toshiba Semiconductor and Storage	2,670	-	RFQ	Datasheet	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	22pF @ 650V, 1MHz	0 ns	30 µA @ 650 V	650 V	6A (DC)	175°C (Max)	1.6 V @ 6 A
1N1184 DIODE GEN PURP 100V 35A DO5 GeneSiC Semiconductor	2,181	-	RFQ	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	100 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
SK22ATR DIODE SCHOTTKY 20V 2A SMA SMC Diode Solutions	3,722	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	250pF @ 4V, 1MHz	-	1 mA @ 20 V	20 V	2A	-55°C ~ 125°C	550 mV @ 2 A
1N5391-E3/54 DIODE GEN PURP 50V 1.5A DO204AL Vishay General Semiconductor - Diodes Division	3,251	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	2 µs	5 µA @ 50 V	50 V	1.5A	-50°C ~ 150°C	1.4 V @ 1.5 A
DSEP12-12A DIODE GEN PURP 1.2KV 15A TO220AC IXYS	3,089	-	RFQ	Datasheet	Tube	HiPerFRED™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	100 µA @ 1200 V	1200 V	15A	-55°C ~ 175°C	2.75 V @ 15 A
1N4151WS-G3-08 DIODE GEN PURP 50V 150MA SOD323 Vishay General Semiconductor - Diodes Division	3,692	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	4 ns	50 nA @ 50 V	50 V	150mA	-55°C ~ 150°C	1 V @ 50 mA
C4D02120A DIODE SCHOTTKY 1.2KV 2A TO220-2 Wolfspeed, Inc.	3,195	-	RFQ	Datasheet	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	167pF @ 0V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	10A (DC)	-55°C ~ 175°C	1.8 V @ 2 A
AIDW30S65C5XKSA1 DIODE SCHOTTKY 650V 30A TO247 Infineon Technologies	2,900	-	RFQ	Datasheet	Tube	Automotive, AEC-Q100/101, CoolSiC™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	860pF @ 1V, 1MHz	0 ns	120 µA @ 650 V	650 V	30A (DC)	-40°C ~ 175°C	1.7 V @ 30 A
1N4006G R0G DIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation	2,912	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1 V @ 1 A
1N5396-E3/54 DIODE GEN PURP 500V 1.5A DO204AL Vishay General Semiconductor - Diodes Division	3,861	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	2 µs	5 µA @ 500 V	500 V	1.5A	-50°C ~ 150°C	1.4 V @ 1.5 A
STTH12R06G DIODE GEN PURP 600V 12A D2PAK STMicroelectronics	2,571	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	45 ns	45 µA @ 600 V	600 V	12A	175°C (Max)	2.9 V @ 12 A
1N4003B-G DIODE GEN PURP 200V 1A DO41 Comchip Technology	3,270	-	RFQ	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
D4015L56TP DIODE GEN PURP 400V 9.5A TO220 Littelfuse Inc.	2,635	-	RFQ	Datasheet	Tube	Teccor®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 µs	10 µA @ 400 V	400 V	9.5A	-40°C ~ 125°C	1.6 V @ 9.5 A