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Diodes-Rectifiers-Single

Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SF2L8GHB0G DIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation	2,837	-	RFQ	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	1 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
MURF8L60HC0G DIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation	3,753	-	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	65 ns	5 µA @ 600 V	600 V	8A	-55°C ~ 175°C	1.3 V @ 8 A
SS29 M4G DIODE SCHOTTKY 90V 2A DO214AA Taiwan Semiconductor Corporation	2,252	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1A A0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	2,004	-	RFQ	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
SR504HA0G DIODE SCHOTTKY 40V 5A DO201AD Taiwan Semiconductor Corporation	3,263	-	RFQ	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	5A	-55°C ~ 125°C	550 mV @ 5 A
S1BLHMHG DIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation	2,302	-	RFQ	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 100 V	100 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF31G B0G DIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation	3,721	-	RFQ	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF1001G C0G DIODE GEN PURP 50V 10A TO220AB Taiwan Semiconductor Corporation	3,698	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	975 mV @ 5 A
SS29HM4G DIODE SCHOTTKY 90V 2A DO214AA Taiwan Semiconductor Corporation	3,329	-	RFQ	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1AHA0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	3,549	-	RFQ	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
SR505 A0G DIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation	3,760	-	RFQ	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	5A	-55°C ~ 150°C	700 mV @ 5 A
S1DL M2G DIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation	2,154	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 200 V	200 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF31GHB0G DIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation	3,488	-	RFQ	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF1001GHC0G DIODE GEN PURP 50V 10A TO220AB Taiwan Semiconductor Corporation	2,976	-	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	975 mV @ 5 A
SS29L M2G DIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation	2,420	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1B A0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	3,168	-	RFQ	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
SR505HA0G DIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation	2,584	-	RFQ	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	5A	-55°C ~ 150°C	700 mV @ 5 A
S1DL MHG DIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation	3,413	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 200 V	200 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
S1FLB-GS18 DIODE GP 100V 700MA DO219AB Vishay General Semiconductor - Diodes Division	2,557	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	1.8 µs	10 µA @ 100 V	100 V	700mA	-55°C ~ 150°C	1.1 V @ 1 A
SCS308AMC DIODES SILICON CARBIDE Rohm Semiconductor	2,373	-	RFQ	Datasheet	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	400pF @ 1V, 1MHz	0 ns	40 µA @ 650 V	650 V	8A (DC)	175°C (Max)	1.5 V @ 8 A