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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF21G-TPDIODE GPP SUPER FAST 2A DO-15 Micro Commercial Co |
2,229 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | - | 50 V | 2A | -65°C ~ 150°C | - | |
|
SS26F-HFDIODE SCHOTTKY 2A 60V SMAF Comchip Technology |
3,161 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
|
B130BQ-13-FDIODE SCHOTTKY 30V 1A SMB Diodes Incorporated |
3,117 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 1A | -65°C ~ 150°C | 500 mV @ 1 A |
|
RGL34BHE3/98DIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,101 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
GL41J-E3/97DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,155 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
SB2D-M3/5BTDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,474 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
SF22G-TPDIODE GPP SUPER FAST 2A DO-15 Micro Commercial Co |
3,903 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | - | 100 V | 2A | -65°C ~ 150°C | - | |
|
RS1D M2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
3,093 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
V2P22L-M3/ISCHOTTKY RECTIFIER 2A 200V SMP Vishay General Semiconductor - Diodes Division |
3,758 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 40 µA @ 200 V | 200 V | 1.6A | -40°C ~ 175°C | 760 mV @ 1 A |
|
|
RGL34DHE3/98DIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,509 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
|
GL41K-E3/97DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,273 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
SB2G-M3/5BTDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,837 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
SF23G-TPDIODE GPP SUPER FAST 2A DO-15 Micro Commercial Co |
3,365 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | - | 150 V | 2A | -65°C ~ 150°C | - | |
|
|
RS1G M2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
2,314 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SS22S-E3/61TDIODE SCHOTTKY 20V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,474 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A | |
|
|
RGL34GHE3/98DIODE GEN PURP 400V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,428 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
|
GL41T-E3/97DIODE GEN PURP 1.3KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,717 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1300 V | 1300 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
SB2J-M3/5BTDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,301 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
SF25G-TPDIODE GPP SUPER FAST 2A DO-15 Micro Commercial Co |
3,354 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 35 ns | - | 300 V | 2A | -65°C ~ 150°C | - | |
|
|
RS1J M2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
2,868 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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