| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UF4001DIODE GEN PURP 50V 1A DO41 onsemi |
2,277 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 1 V @ 1 A | |
|
RGL34JHE3/98DIODE GEN PURP 600V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,782 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
1N5402G-TDIODE GEN PURP 200V 3A DO201AD Diodes Incorporated |
3,077 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 150°C | 1.1 V @ 3 A | |
|
SB2K-M3/5BTDIODE GEN PURP 800V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,040 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
SF26G-TPDIODE GPP SUPER FAST 2A DO-15 Micro Commercial Co |
3,970 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 35 ns | - | 400 V | 2A | -65°C ~ 150°C | - | |
|
|
RS1K M2GDIODE GEN PURP 800V 1A DO214AC Taiwan Semiconductor Corporation |
2,728 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SFT15G R0GDIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation |
3,732 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
BYG10D-M3/TR3DIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division |
2,474 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
1N5407G-TDIODE GEN PURP 800V 3A DO201AD Diodes Incorporated |
3,176 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 2 µs | 5 µA @ 800 V | 800 V | 3A | -65°C ~ 150°C | 1.1 V @ 3 A | |
|
RS3000-TPDIODE GEN PURP 3KV 200MA DO41 Micro Commercial Co |
3,110 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | - | 3000 V | 200mA | -55°C ~ 150°C | - | |
|
EGF1B-1HE3_A/HDIODE GEN PURP 100V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,117 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
UH2C-M3/5BTDIODE GEN PURP 2A SMA Vishay General Semiconductor - Diodes Division |
2,253 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 42pF @ 4V, 1MHz | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A | |
|
|
FR603GP-APDIODE GPP FAST 6A R-6 Micro Commercial Co |
3,916 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 150 ns | - | 200 V | 6A | -55°C ~ 150°C | - | |
|
FR202G A0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
2,818 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
SFT18GHA1GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,343 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
SF11-TPDIODE GPP SUPER FAST 1A DO-41 Micro Commercial Co |
3,260 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 35 ns | - | 50 V | 1A | -55°C ~ 125°C | - | |
|
EGF1D-2HE3_A/HDIODE GEN PURP 200V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,271 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
UH6PD-M3H/IDIODE GEN PURP 6A TO277A Vishay General Semiconductor - Diodes Division |
2,574 | - |
RFQ |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 80pF @ 4V, 1MHz | 40 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.05 V @ 6 A | |
|
|
FR604GP-APDIODE GPP FAST 6A R-6 Micro Commercial Co |
3,059 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 150 ns | - | 400 V | 6A | -55°C ~ 150°C | - | |
|
FR203G A0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
3,573 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |