Hello! now About Us
+86 075582561136
sales19@fudongic.com
Upload BOM
Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N5310-1CURRENT REGULATOR DIODE Microchip Technology |
2,590 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
JANTXV1N5619US/TRRECTIFIER UFR,FRR Microchip Technology |
2,866 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
1N4305-1E3DIODE SWITCHING DO-35 Microchip Technology |
2,558 | - |
RFQ |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 2 ns | 100 nA @ 50 V | 50 V | 200mA | -65°C ~ 150°C | 850 mV @ 10 mA | ||
|
6A100G R0GDIODE GEN PURP 6A R-6 Taiwan Semiconductor Corporation |
2,657 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
SMLW RVG0.8A, 1000V, STANDARD RECOVERY R Taiwan Semiconductor Corporation |
3,068 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 800mA | -55°C ~ 150°C | 1.1 V @ 800 mA | ||
|
|
6A40G R0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
3,367 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
RS2D M4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,633 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
6A60G R0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
2,062 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
RS2G M4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
3,411 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
6A80GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
2,871 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
RS2J M4GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
2,122 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
RS3AHE3_A/IDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,996 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
|
|
RS3BHE3_A/IDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,615 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
|
|
RS2K M4GDIODE GEN PURP 800V 2A DO214AA Taiwan Semiconductor Corporation |
2,088 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
RS3DHE3_A/IDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,593 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
|
|
RS2M M4GDIODE GEN PURP 2A DO214AA Taiwan Semiconductor Corporation |
3,702 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
RS3GHE3_A/IDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,731 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
|
SS22-LTPDIODE SCHOTTKY 20V 2A DO214AC Micro Commercial Co |
2,040 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 230pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 2A | -55°C ~ 125°C | 550 mV @ 2 A | |
|
MBR5100MFST1GDIODE SCHOTTKY 100V 5A 5DFN onsemi |
3,549 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 175°C | 980 mV @ 5 A | |
|
SS1FH6-M3/IDIODE SCHOTTKY 60V 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,552 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 3 µA @ 60 V | 60 V | 1A | -55°C ~ 175°C | 700 mV @ 1 A |
Request a Quote
- 1500+ Daily average RFQ Volume
- 20,000.000 Standard Product Unit
- 1800+ Worldwide Manufacturers
- 15,000+ In-stock Warehouse
