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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RU 2ZVDIODE GEN PURP 200V 1A AXIAL Sanken |
3,781 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 1.5 V @ 1 A | |
|
HS2JA M2GDIODE GEN PURP 600V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,157 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A | |
|
|
RU 2ZV1DIODE GEN PURP 200V 1A AXIAL Sanken |
2,443 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 1.5 V @ 1 A | |
|
ESDLW RQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
2,742 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 21pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 950 mV @ 800 mA | |
|
|
AL01V0DIODE GEN PURP 400V 1A AXIAL Sanken |
2,382 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
|
ESGLW RQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,683 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
AL01WKDIODE GEN PURP 400V 1A AXIAL Sanken |
3,269 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
|
ESJLW RQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,298 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 800mA | -55°C ~ 150°C | 1.7 V @ 800 mA | |
|
|
AL01WSDIODE GEN PURP 400V 1A AXIAL Sanken |
2,683 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
|
NSR02L40MX2WT5G40V LOW IR 150C TJMAX SCHOTTKY D onsemi |
3,522 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount, Wettable Flank | 2pF @ 1V, 1MHz | 4 ns | 500 nA @ 40 V | 40 V | 200mA (DC) | -55°C ~ 150°C | 1.2 V @ 100 mA | |
|
|
EG 1V0DIODE GEN PURP 400V 800MA AXIAL Sanken |
3,560 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 50 µA @ 400 V | 400 V | 800mA | -40°C ~ 150°C | 1.8 V @ 800 mA | |
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|
RS1PB-M3/84ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,234 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
EG 1V1DIODE GEN PURP 400V 800MA AXIAL Sanken |
3,492 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 50 µA @ 400 V | 400 V | 800mA | -40°C ~ 150°C | 1.8 V @ 800 mA | |
|
|
RS1PJ-M3/84ADIODE GEN PURP 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,756 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 250 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
EK 04WDIODE SCHOTTKY 40V 1A AXIAL Sanken |
2,305 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 5 mA @ 40 V | 40 V | 1A | -40°C ~ 150°C | 550 mV @ 1 A | |
|
|
ES1LD M2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,255 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
EK 06V0DIODE SCHOTTKY 60V 700MA AXIAL Sanken |
2,360 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 60 V | 60 V | 700mA | -40°C ~ 150°C | 620 mV @ 700 mA | |
|
|
ES1LG M2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
3,035 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
EK 06V1DIODE SCHOTTKY 60V 700MA AXIAL Sanken |
2,094 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 60 V | 60 V | 700mA | -40°C ~ 150°C | 620 mV @ 700 mA | |
|
|
ES1LJ M2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
3,364 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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