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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UG06A R0GDIODE GEN PURP 50V 600MA TS-1 Taiwan Semiconductor Corporation |
2,427 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 50 V | 50 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
EP01CV0DIODE GEN PURP 1KV 200MA AXIAL Sanken |
2,920 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 200 ns | 5 µA @ 1000 V | 1000 V | 200mA | -40°C ~ 150°C | 4 V @ 200 mA | |
|
|
UG06B R0GDIODE GEN PURP 100V 600MA TS-1 Taiwan Semiconductor Corporation |
3,318 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 100 V | 100 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
EP01CWDIODE GEN PURP 1KV 200MA AXIAL Sanken |
3,828 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 200 ns | 5 µA @ 1000 V | 1000 V | 200mA | -40°C ~ 150°C | 4 V @ 200 mA | |
|
|
UG06C R0GDIODE GEN PURP 150V 600MA TS-1 Taiwan Semiconductor Corporation |
3,188 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 150 V | 150 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
ES 1V0DIODE GEN PURP 400V 700MA AXIAL Sanken |
2,456 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 400 V | 400 V | 700mA | -40°C ~ 150°C | 2.5 V @ 800 mA | |
|
|
UG06D R0GDIODE GEN PURP 200V 600MA TS-1 Taiwan Semiconductor Corporation |
2,715 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
ES 1V1DIODE GEN PURP 400V 700MA AXIAL Sanken |
2,208 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 400 V | 400 V | 700mA | -40°C ~ 150°C | 2.5 V @ 800 mA | |
|
|
SDM1M40LP8Q-7DIODE SCHOTTKY 40V 1A UDFN16082 Diodes Incorporated |
2,896 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 25pF @ 5V, 1MHz | 8.4 ns | 20 µA @ 40 V | 40 V | 1A | -65°C ~ 150°C | 660 mV @ 1 A |
|
|
EU 1ZV0DIODE GEN PURP 200V 500MA AXIAL Sanken |
3,857 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 500mA | -40°C ~ 150°C | 1 V @ 500 mA | |
|
|
S1BHDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
2,595 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
EU 1ZV1DIODE GEN PURP 200V 500MA AXIAL Sanken |
3,406 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 500mA | -40°C ~ 150°C | 1 V @ 500 mA | |
|
SBA130CS-AU_R1_000A1SOD-323, SKY Panjit International Inc. |
3,243 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 470 mV @ 1 A |
|
|
EU 2AV0DIODE GEN PURP 600V 1A AXIAL Sanken |
3,997 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
|
SBA120CS-AU_R1_000A1SOD-323, SKY Panjit International Inc. |
2,255 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 20 V | 20 V | 1A | -55°C ~ 150°C | 450 mV @ 1 A |
|
|
VS-VSKE71/10DIODE GEN PURP 1KV 80A ADDAPAK Vishay General Semiconductor - Diodes Division |
3,305 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 10 mA @ 1000 V | 1000 V | 80A | -40°C ~ 150°C | - | |
|
|
JANTX1N5553USDIODE GEN PURP 800V 3A B-MELF Microchip Technology |
3,961 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 1 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.3 V @ 9 A |
|
|
S35140RECTIFIER Microchip Technology |
3,891 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 25 µA @ 1400 V | 1400 V | 70A | -65°C ~ 200°C | 1.25 V @ 200 A | |
|
|
R4240FRECTIFIER Microchip Technology |
3,572 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 50 µA @ 400 V | 400 V | 125A | -65°C ~ 200°C | 1.2 V @ 200 A | |
|
JANTXV1N5291-1/TRCURRENT REGULATOR Microchip Technology |
2,185 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - |
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