| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-40HFLR60S02MDIODE GEN PURP 600V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,316 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 600 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
VS-SD600N20PCDIODE GEN PURP 2KV 600A B8 Vishay General Semiconductor - Diodes Division |
3,300 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 2000 V | 2000 V | 600A | -40°C ~ 180°C | 1.31 V @ 1500 A | |
|
VS-70HFL40S02MDIODE GEN PURP 400V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,549 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | - | 400 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
VS-SD600R20PCDIODE GEN PURP 2KV 600A B8 Vishay General Semiconductor - Diodes Division |
2,846 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 2000 V | 2000 V | 600A | -40°C ~ 190°C | 1.31 V @ 1500 A | |
|
VS-70HFL60S02MDIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,583 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | - | 600 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
JANTXV1N5812RECTIFIER Microchip Technology |
2,379 | - |
RFQ |
Bulk | MILITARY, MIL-PRF-19500/478 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | 300pF @ 10V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 20A | -65°C ~ 175°C | 950 mV @ 20 A | |
|
VS-70HFLR40S02MDIODE GEN PURP 400V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,143 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | - | 400 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
4-1616379-760105075=DIODE TE Connectivity Aerospace, Defense and Marine |
3,577 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
VS-70HFLR60S02MDIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,458 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | - | 600 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
D2450N02TXPSA1DIODE GEN PURP 200V 2450A Infineon Technologies |
2,560 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 200 V | 200 V | 2450A | -40°C ~ 180°C | 880 mV @ 2000 A | |
|
VS-41HFR40MDIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,427 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 400 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
MSASC25H45KRECTIFIER Microchip Technology |
2,453 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | - | 45 V | 25A | -55°C ~ 150°C | 610 mV @ 20 A | ||
|
JANTXV1N6620USDIODE GEN PURP 220V 1.2A D5A Microchip Technology |
2,982 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 500 nA @ 220 V | 220 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A |
|
W3477MC360RECTIFIER DIODE IXYS |
3,554 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 38 µs | 100 mA @ 3600 V | 3600 V | 3470A | -40°C ~ 160°C | 1.34 V @ 3000 A | ||
|
JAN1N6076DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology |
2,824 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 5 µA @ 50 V | 50 V | 1.3A | -65°C ~ 155°C | 1.76 V @ 18.8 A |
|
UFR3250RECTIFIER Microchip Technology |
3,458 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | - | - | 30A | -65°C ~ 175°C | 1.2 V @ 15 A | ||
|
JAN1N6077DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology |
2,818 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 5 µA @ 100 V | 100 V | 1.3A | -65°C ~ 155°C | 1.76 V @ 18.8 A |
|
UFR3280RECTIFIER Microchip Technology |
3,714 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 60 ns | - | 800 V | 30A | 175°C (Max) | 1.35 V @ 30 A | ||
|
JANTXV1N6620UDIODE GEN PURP 200V 1.2A A-MELF Microchip Technology |
2,119 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 500 nA @ 200 V | 200 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
UFR3270RECTIFIER Microchip Technology |
3,450 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | 100pF @ 10V, 1MHz | 60 ns | 15 µA @ 700 V | 700 V | 30A | -65°C ~ 175°C | 1.35 V @ 30 A |