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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RS1BL RVGDIODE GEN PURP 100V 800MA SUBSMA Taiwan Semiconductor Corporation |
8,392 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
1N4002-GDIODE GEN PURP 100V 1A DO41 Comchip Technology |
5,637 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
1N6765RECTIFIER DIODE Microchip Technology |
3,507 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/642 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 5V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 12A (DC) | -55°C ~ 175°C | 1.05 V @ 12 A |
|
|
JANTX1N6631USDIODE GEN PURP 1.1KV 1.4A D5B Microchip Technology |
2,142 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 10V, 1MHz | 60 ns | 4 µA @ 1100 V | 1100 V | 1.4A | -65°C ~ 150°C | 1.6 V @ 1.4 A | |
|
|
JANTX1N7043CAT1SCHOTTKY DIODE Microchip Technology |
2,190 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
UES1106E3RECTIFIER Microchip Technology |
2,524 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
JANTX1N7043CCT1SCHOTTKY DIODE Microchip Technology |
2,048 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
1N6659RRECTIFIER DIODE Microchip Technology |
2,948 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/616 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 10V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 15A (DC) | -55°C ~ 175°C | 1.2 V @ 20 A |
|
|
JTX1N3611D MET 1A STD 200V HR Semtech Corporation |
2,671 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N6672RRECTIFIER DIODE Microchip Technology |
3,209 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
1N1185DO5 35 AMP SILICON RECTFIER Solid State Inc. |
2,349 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | - | 12A | -65°C ~ 200°C | 1.2 V @ 30 A | |
|
|
JANTX1N3612D MET 1A STD 400V HR Semtech Corporation |
2,032 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
JANTXV1N6658RECTIFIER Microchip Technology |
2,900 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 10V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 15A (DC) | - | 1.2 V @ 20 A | ||
|
|
JANTX1N3613D MET 1A STD 600V HR Semtech Corporation |
2,534 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
1N1204RDO4 12 AMP SILICON RECTIFIER Solid State Inc. |
3,456 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 400 V | 400 V | 12A | -65°C ~ 200°C | 1.2 V @ 30 A | |
|
|
JANTX1N3614D MET 1A STD 800V HR Semtech Corporation |
2,572 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
1N1660DO9 275 AMP SILICON RECTIFIER Solid State Inc. |
2,577 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 75 µA @ 50 V | 50 V | 275A | -65°C ~ 190°C | 1.3 V @ 300 A | |
|
BAS416-F2-0000HFDIODE GEN PURP 100V 200MA SOD323 Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,258 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 3 µs | 5 nA @ 75 V | 100 V | 200mA | 150°C (Max) | 1.25 V @ 150 mA | |
|
|
1N249DO5 20 AMP SILICON RECTIFIER Solid State Inc. |
2,520 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 µA @ 100 V | 100 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | ||
|
|
JTX1N3957D MET 1A STD 1KV HR Semtech Corporation |
2,574 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
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