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Diodes-Rectifiers-Single

Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-MUR820PBF DIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division	2,427	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Discontinued at Digi-Key	Through Hole	-	35 ns	5 µA @ 200 V	200 V	8A	-65°C ~ 175°C	975 mV @ 8 A
IDH03SG60CXKSA1 DIODE SCHOTTKY 600V 3A TO220-2 Rochester Electronics, LLC	2,861	-	RFQ	Datasheet	Tube,Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	60pF @ 1V, 1MHz	0 ns	15 µA @ 600 V	600 V	3A (DC)	-55°C ~ 175°C	2.3 V @ 3 A
VS-10BQ030PBF DIODE SCHOTTKY 30V 1A SMB Vishay General Semiconductor - Diodes Division	3,023	-	RFQ	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	500 µA @ 30 V	30 V	1A	-55°C ~ 150°C	420 mV @ 1 A
RGP10BEHE3/73 DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division	2,531	-	RFQ	Datasheet	Tape & Box (TB)	SUPERECTIFIER®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	1A	-65°C ~ 175°C	1.3 V @ 1 A
BYD33DGPHE3/54 DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division	3,585	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1A	-65°C ~ 175°C	1.3 V @ 1 A
UG2G-E3/54 DIODE GEN PURP 400V 2A DO204AC Vishay General Semiconductor - Diodes Division	2,335	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	25 ns	5 µA @ 400 V	400 V	2A	-55°C ~ 150°C	950 mV @ 2 A
VS-8ETH06PBF DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division	2,917	-	RFQ	Datasheet	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	-	25 ns	50 µA @ 600 V	600 V	8A	-65°C ~ 175°C	2.4 V @ 8 A
IDH04SG60CXKSA1 DIODE SCHOTTKY 600V 4A TO220-2 Rochester Electronics, LLC	3,582	-	RFQ	Datasheet	Bulk,Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	80pF @ 1V, 1MHz	0 ns	25 µA @ 600 V	600 V	4A (DC)	-55°C ~ 175°C	2.3 V @ 4 A
VS-10BQ040PBF DIODE SCHOTTKY 40V 1A SMB Vishay General Semiconductor - Diodes Division	3,158	-	RFQ	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	100 µA @ 40 V	40 V	1A	-55°C ~ 150°C	530 mV @ 1 A
RGP10BHE3/73 DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division	3,043	-	RFQ	Datasheet	Tape & Box (TB)	SUPERECTIFIER®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	1A	-65°C ~ 175°C	1.3 V @ 1 A
PMEG2002ESF,315 NOW NEXPERIA PMEG2002ESF - RECTI Rochester Electronics, LLC	3,493,700	-	RFQ	Datasheet	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	25pF @ 1V, 1MHz	1.9 ns	3.5 µA @ 20 V	20 V	200mA	125°C (Max)	490 mV @ 100 mA
SF1604GHC0G DIODE GEN PURP 200V 16A TO220AB Taiwan Semiconductor Corporation	3,561	-	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	975 mV @ 8 A
VS-60APF04PBF DIODE GEN PURP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division	3,996	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	180 ns	100 µA @ 400 V	400 V	60A	-40°C ~ 150°C	1.3 V @ 60 A
SK510C V7G DIODE SCHOTTKY 5A 100V DO-214AB Taiwan Semiconductor Corporation	1,292	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	300 µA @ 100 V	100 V	5A	-55°C ~ 150°C	850 mV @ 5 A
SF1604PT C0G DIODE GEN PURP 200V 16A TO247AD Taiwan Semiconductor Corporation	3,297	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	950 mV @ 8 A
VS-60APF06PBF DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	2,499	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	180 ns	100 µA @ 600 V	600 V	60A	-40°C ~ 150°C	1.3 V @ 60 A
SBRD835LT4 SCHOTTKY BARRIER RECTIFIER Rochester Electronics, LLC	35,000	-	RFQ		Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
SF1604PTHC0G DIODE GEN PURP 200V 16A TO247AD Taiwan Semiconductor Corporation	2,602	-	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	950 mV @ 8 A
TRS8A65F,S1Q PB-F DIODE TO-220-2L V=650 IF=8A Toshiba Semiconductor and Storage	200	-	RFQ		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	28pF @ 650V, 1MHz	0 ns	40 µA @ 650 V	650 V	8A (DC)	175°C (Max)	1.6 V @ 8 A
VS-60APF10PBF DIODE GEN PURP 1KV 60A TO247AC Vishay General Semiconductor - Diodes Division	3,515	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	480 ns	100 µA @ 1000 V	1000 V	60A	-40°C ~ 150°C	1.4 V @ 60 A