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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS310LHRVGDIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation |
2,308 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
VS-25ETS12SPBFDIODE GEN PURP 1.2KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,237 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
RGP10BE-E3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,802 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
SS34LHRVGDIODE SCHOTTKY 40V 3A SUB SMA Taiwan Semiconductor Corporation |
3,261 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A |
|
VS-30APF02PBFDIODE SCHOTTKY 100V 3A TO247AC Vishay General Semiconductor - Diodes Division |
2,593 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 115pF @ 5V, 1MHz | - | 500 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 790 mV @ 3 A | ||
|
|
VS-30APF04PBFDIODE SCHOTTKY 400V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,183 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 400 V | 400 V | 30A | -55°C ~ 175°C | 1.41 V @ 30 A | ||
|
|
VS-30APF06PBFDIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,134 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 100 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | ||
|
SF1602PTHC0GDIODE GEN PURP 100V 16A TO247AD Taiwan Semiconductor Corporation |
3,122 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
VS-30APF10PBFDIODE GEN PURP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,206 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 100 µA @ 1000 V | 1000 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | ||
|
SF1603G C0GDIODE GEN PURP 150V 16A TO220AB Taiwan Semiconductor Corporation |
2,667 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A | |
|
|
VS-30APF12PBFDIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,716 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 100 µA @ 1200 V | 1200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | ||
|
|
SF1603GHC0GDIODE GEN PURP 150V 16A TO220AB Taiwan Semiconductor Corporation |
2,580 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A |
|
VS-30ETH06FP-F3DIODE GEN PURP 600V 30A TO220FP Vishay General Semiconductor - Diodes Division |
3,753 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 23 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
|
|
SF1603PT C0GDIODE GEN PURP 150V 16A TO247AD Taiwan Semiconductor Corporation |
3,024 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
VS-30ETH06-N3DIODE GEN PURP 600V 30A TO220AC Vishay General Semiconductor - Diodes Division |
3,862 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 31 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
|
VS-40EPS16PBFDIODE GEN PURP 1.6KV 40A TO247AC Vishay General Semiconductor - Diodes Division |
2,236 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 40A | -40°C ~ 150°C | 1.14 V @ 40 A | |
|
|
SF1603PTHC0GDIODE GEN PURP 150V 16A TO247AD Taiwan Semiconductor Corporation |
3,596 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
VS-60APF02PBFDIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,270 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 180 ns | 100 µA @ 200 V | 200 V | 60A | -40°C ~ 150°C | 1.3 V @ 60 A | |
|
|
BYD33DGP-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,566 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
UG06C-E3/54DIODE GEN PURP 150V 600MA MPG06 Vishay General Semiconductor - Diodes Division |
2,425 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 9pF @ 4V, 1MHz | 25 ns | 5 µA @ 150 V | 150 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA |
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