| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS16-D87ZBAS16 - SWITCHING DIODE, 85 V 20 Rochester Electronics, LLC |
690,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
SF1605G C0GDIODE GEN PURP 300V 16A TO220AB Taiwan Semiconductor Corporation |
3,766 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
FR107G-D1-3000DIODE GEN PURP 1000V 1A DO204AL Yangzhou Yangjie Electronic Technology Co.,Ltd |
49,890 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 500 ns | 2.5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
VS-60APF12PBFDIODE GEN PURP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,287 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 480 ns | 100 µA @ 1200 V | 1200 V | 60A | -40°C ~ 150°C | 1.4 V @ 60 A | ||
|
PMEG3005AESF,315PMEG3005AESF - 30V, 0.5A LOW VF Rochester Electronics, LLC |
3,132,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
SF1605GHC0GDIODE GEN PURP 300V 16A TO220AB Taiwan Semiconductor Corporation |
2,136 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
S8JC V7GDIODE GEN PURP 600V 8A DO214AB Taiwan Semiconductor Corporation |
1,199 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A | |
|
1N4733AT9-ERECTIFIER DIODE Rochester Electronics, LLC |
30,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
SF1605PT C0GDIODE GEN PURP 300V 16A TO247AD Taiwan Semiconductor Corporation |
3,821 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
SF1605PTHC0GDIODE GEN PURP 300V 16A TO247AD Taiwan Semiconductor Corporation |
2,695 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
SF1606GHC0GDIODE GEN PURP 400V 16A TO220AB Taiwan Semiconductor Corporation |
2,013 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
SF1606PTHC0GDIODE GEN PURP 400V 16A TO247AD Taiwan Semiconductor Corporation |
3,980 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
RL255-TPDIODE GEN PURP 2.5A 600V R3 Micro Commercial Co |
3,862 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 35pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 2.5A | -55°C ~ 150°C | 1 V @ 2.5 A | |
|
SF1607G C0GDIODE GEN PURP 500V 16A TO220AB Taiwan Semiconductor Corporation |
3,368 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
|
RL256-TPDIODE GEN PURP 2.5A 800V R3 Micro Commercial Co |
3,253 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 35pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 2.5A | -55°C ~ 150°C | 1 V @ 2.5 A | |
|
SF1607GHC0GDIODE GEN PURP 500V 16A TO220AB Taiwan Semiconductor Corporation |
2,164 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
RL257-TPDIODE GEN PURP 2.5A 1000V R3 Micro Commercial Co |
3,061 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 35pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 2.5A | -55°C ~ 150°C | 1 V @ 2.5 A | |
|
SF1607PT C0GDIODE GEN PURP 500V 16A TO247AD Taiwan Semiconductor Corporation |
2,814 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
IDW10S120FKSA1DIODE SCHOTTKY 1200V 10A TO247-3 Rochester Electronics, LLC |
2,880 | - |
RFQ |
Datasheet |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 580pF @ 1V, 1MHz | 0 ns | 240 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
SF1607PTHC0GDIODE GEN PURP 500V 16A TO247AD Taiwan Semiconductor Corporation |
2,886 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A |