| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH10S120AKSA1DIODE SCHOTTKY 1200V 10A TO220-2 WEC |
325 | - |
RFQ |
Datasheet |
Bulk,Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 500pF @ 1V, 1MHz | 0 ns | 240 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
RGP10JE-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,001 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BYD33MGPHE3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,971 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 300 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | - | |
|
|
VS-HFA08TB60PBFDIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,851 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 55 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
VS-30BQ015PBFDIODE SCHOTTKY 15V 3A SMC Vishay General Semiconductor - Diodes Division |
2,341 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 4 mA @ 15 V | 15 V | 3A | -55°C ~ 125°C | 350 mV @ 3 A | |
|
UGB5JT-E3/81DIODE GEN PURP 600V 5A TO263AB Vishay General Semiconductor - Diodes Division |
2,154 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.75 V @ 5 A | |
|
IDH10SG60CXKSA1DIODE SCHOTTKY 600V 10A TO220-2 Rochester Electronics, LLC |
138 | - |
RFQ |
Datasheet |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 290pF @ 1V, 1MHz | 0 ns | 90 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 175°C | 2.1 V @ 10 A |
|
RGP10JEHE3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,747 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BYM07-100HE3/83DIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,272 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
|
VS-15ETL06PBFDIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,118 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 270 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
VS-30BQ040PBFDIODE SCHOTTKY 40V 3A SMC Vishay General Semiconductor - Diodes Division |
3,773 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 530 mV @ 3 A | |
|
UGB5JTHE3/81DIODE GEN PURP 600V 5A TO263AB Vishay General Semiconductor - Diodes Division |
2,512 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.75 V @ 5 A |
|
IDH12SG60CXKSA1DIODE SCHOTTKY 600V 12A TO220-2 Rochester Electronics, LLC |
3,241 | - |
RFQ |
Datasheet |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 310pF @ 1V, 1MHz | 0 ns | 100 µA @ 600 V | 600 V | 12A (DC) | -55°C ~ 175°C | 2.1 V @ 12 A |
|
RGP10JHE3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,669 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BYM07-200HE3/83DIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,622 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
|
VS-15ETH06PBFDIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,104 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
|
VS-30BQ100PBFDIODE SCHOTTKY 100V 3A SMC Vishay General Semiconductor - Diodes Division |
3,652 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 790 mV @ 3 A | |
|
UH1B-E3/5ATDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,947 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A | |
|
NTE5963R-400PRV 25A ANODE CASE NTE Electronics, Inc |
116 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 1 mA @ 400 V | 400 V | 25A | -65°C ~ 175°C | 1.7 V @ 57 A | |
|
SB1100RECTIFIER DIODE, SCHOTTKY, 1A, 1 Rochester Electronics, LLC |
29,023 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 100 V | 100 V | 1A | -50°C ~ 150°C | 790 mV @ 1 A |