| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4005GPP BKDIODE GEN PURP 600V 1A DO41 Central Semiconductor Corp |
2,460 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
SF3006PTHC0GDIODE GEN PURP 400V 30A TO247AD Taiwan Semiconductor Corporation |
2,209 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 30A | -55°C ~ 150°C | 1.3 V @ 15 A |
|
1N4006 BKDIODE GEN PURP 800V 1A DO41 Central Semiconductor Corp |
3,664 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
SF801G C0GDIODE GEN PURP 50V 8A TO220AB Taiwan Semiconductor Corporation |
3,692 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A | |
|
1N4007GPP BKDIODE GEN PURP 1KV 1A DO41 Central Semiconductor Corp |
3,471 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
SF801GHC0GDIODE GEN PURP 50V 8A TO220AB Taiwan Semiconductor Corporation |
2,278 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A |
|
1N4002GL TRDIODE GEN PURP 100V 1A DO41 Central Semiconductor Corp |
2,976 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | ||
|
KYW35A6DIODE STD D12.77X6.6W 600V 35A Diotec Semiconductor |
500 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 100 µA @ 600 V | 600 V | 35A | -50°C ~ 175°C | 1.1 V @ 35 A | |
|
RHRU10050RECTIFIER DIODE Rochester Electronics, LLC |
209 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 60 ns | 500 µA @ 500 V | 500 V | 100A | -65°C ~ 175°C | 2.1 V @ 100 A | |
|
UF4003RECTIFIER DIODE, 1A, 200V, DO-41 Rochester Electronics, LLC |
109,151 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 1A | -50°C ~ 175°C | 1 V @ 1 A | |
|
1N458AHIGH CONDUCTANCE LOW LEAKAGE DIO Rochester Electronics, LLC |
273,640 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 25 µA @ 125 V | 150 V | 500mA | 175°C (Max) | 1 V @ 100 mA | |
|
RGP10DRECTIFIER DIODE, 1A, 200V, DO-41 Rochester Electronics, LLC |
41,974 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
ES3DB R5GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
1,885 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 46pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
1N645D-SI 225V .4A NTE Electronics, Inc |
314 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 200 nA @ 225 V | 225 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
FFSP05120ADIODE SCHOTTKY 1.2KV TO220-2 onsemi |
540 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | 200 µA @ 1200 V | 1200 V | - | - | 1.75 V @ 5 A | |
|
1PS74SB23,125NEXPERIA 1PS74SB23 - RECTIFIER D Rochester Electronics, LLC |
68,975 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 100pF @ 4V, 1MHz | - | 1 mA @ 25 V | 25 V | 1A (DC) | 125°C (Max) | 450 mV @ 1 A | |
|
1N4007DIODE GEN PURP 1000V 1A DO-41 Rectron USA |
239,997 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 200 nA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
BAS40-06E6327BAS40 - HIGH SPEED SWITCHING, CL Rochester Electronics, LLC |
39,599 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
RFNL5BM6SFHTLSUPER FAST RECOVERY DIODE (AEC-Q Rohm Semiconductor |
1,877 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.3 V @ 5 A |
|
RURP3010RECTIFIER DIODE Rochester Electronics, LLC |
6,015 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 500 µA @ 100 V | 100 V | 30A | -55°C ~ 175°C | 1 V @ 30 A |