| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDC08S60CEX1SA3DIODE SIC 600V 8A SAWN WAFER Infineon Technologies |
2,594 | - |
RFQ |
Datasheet |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 310pF @ 1V, 1MHz | 0 ns | 100 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A |
|
IDH05SG60CXKSA1DIODE SCHOTTKY 600V 5A TO220-2 Rochester Electronics, LLC |
12,303 | - |
RFQ |
Datasheet |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 110pF @ 1V, 1MHz | 0 ns | 30 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 2.3 V @ 5 A |
|
SF2008GHC0GDIODE GEN PURP 600V 20A TO220AB Taiwan Semiconductor Corporation |
3,678 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 20A | -55°C ~ 150°C | 1.7 V @ 10 A |
|
VS-10BQ100PBFDIODE SCHOTTKY 100V 1A SMB Vishay General Semiconductor - Diodes Division |
3,858 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 780 mV @ 1 A | |
|
IDC08S60CEX7SA1DIODE GEN PURPOSE SAWN WAFER Infineon Technologies |
2,607 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | Surface Mount | - | - | - | - | - | - | - | |
|
RGP10DEHE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,206 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
SF3001PT C0GDIODE GEN PURP 50V 30A TO247AD Taiwan Semiconductor Corporation |
2,002 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A | |
|
BYD33JGP-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,456 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | - | |
|
CD214A-F1400DIODE GEN PURP 400V 1A DO214AC Bourns Inc. |
2,188 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 40 V | 400 V | 1A | -55°C ~ 150°C | 1.25 V @ 1 A | |
|
|
VS-8ETX06PBFDIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,661 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 24 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 3 V @ 8 A |
|
UGB12JT-E3/81DIODE GEN PURP 600V 12A TO263AB Vishay General Semiconductor - Diodes Division |
3,938 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 12A | -55°C ~ 150°C | 1.75 V @ 12 A | |
|
IDH06SG60CXKSA1DIODE SCHOTTKY 600V 6A TO220-2 Infineon Technologies |
3,707 | - |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 130pF @ 1V, 1MHz | 0 ns | 50 µA @ 600 V | 600 V | 6A (DC) | -55°C ~ 175°C | 2.3 V @ 6 A |
|
VS-10MQ040NPBFDIODE SCHOTTKY 40V 1.5A SMA Vishay General Semiconductor - Diodes Division |
2,721 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 1.5A | -55°C ~ 150°C | 540 mV @ 1 A | |
|
RGP10DHE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,486 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BYD33JGPHE3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,264 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
VS-MBR1035PBFDIODE SCHOTTKY 35V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,864 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 570 mV @ 10 A | |
|
UGB12JTHE3/81DIODE GEN PURP 600V 12A TO263AB Vishay General Semiconductor - Diodes Division |
2,527 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 12A | -55°C ~ 150°C | 1.75 V @ 12 A |
|
SF3001PTHC0GDIODE GEN PURP 50V 30A TO247AD Taiwan Semiconductor Corporation |
2,933 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A |
|
CDBV1100-HFDIODE SCHOTTKY 100V 1A SOD323 Comchip Technology |
2,103 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 25pF @ 4V, 1MHz | - | 50 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 820 mV @ 1 A | |
|
IDH08S120AKSA1DIODE SCHOTTKY 1.2KV 7.5A TO220 Rochester Electronics, LLC |
3,044 | - |
RFQ |
Datasheet |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 380pF @ 1V, 1MHz | 0 ns | 180 µA @ 1200 V | 1200 V | 7.5A (DC) | -55°C ~ 175°C | 1.8 V @ 7.5 A |