Diodes-Rectifiers-Single

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
IDC08S60CEX1SA3

IDC08S60CEX1SA3

DIODE SIC 600V 8A SAWN WAFER

Infineon Technologies
2,594 -

RFQ

IDC08S60CEX1SA3

Datasheet

Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 310pF @ 1V, 1MHz 0 ns 100 µA @ 600 V 600 V 8A (DC) -55°C ~ 175°C 1.7 V @ 8 A
IDH05SG60CXKSA1

IDH05SG60CXKSA1

DIODE SCHOTTKY 600V 5A TO220-2

Rochester Electronics, LLC
12,303 -

RFQ

IDH05SG60CXKSA1

Datasheet

Tube,Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 110pF @ 1V, 1MHz 0 ns 30 µA @ 600 V 600 V 5A (DC) -55°C ~ 175°C 2.3 V @ 5 A
SF2008GHC0G

SF2008GHC0G

DIODE GEN PURP 600V 20A TO220AB

Taiwan Semiconductor Corporation
3,678 -

RFQ

SF2008GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 20A -55°C ~ 150°C 1.7 V @ 10 A
VS-10BQ100PBF

VS-10BQ100PBF

DIODE SCHOTTKY 100V 1A SMB

Vishay General Semiconductor - Diodes Division
3,858 -

RFQ

VS-10BQ100PBF

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 500 µA @ 100 V 100 V 1A -55°C ~ 175°C 780 mV @ 1 A
IDC08S60CEX7SA1

IDC08S60CEX7SA1

DIODE GEN PURPOSE SAWN WAFER

Infineon Technologies
2,607 -

RFQ

IDC08S60CEX7SA1

Datasheet

Bulk RoHS - - Obsolete Surface Mount - - - - - - -
RGP10DEHE3/73

RGP10DEHE3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,206 -

RFQ

RGP10DEHE3/73

Datasheet

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 1 A
SF3001PT C0G

SF3001PT C0G

DIODE GEN PURP 50V 30A TO247AD

Taiwan Semiconductor Corporation
2,002 -

RFQ

SF3001PT C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 30A -55°C ~ 150°C 950 mV @ 15 A
BYD33JGP-E3/54

BYD33JGP-E3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,456 -

RFQ

BYD33JGP-E3/54

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C -
CD214A-F1400

CD214A-F1400

DIODE GEN PURP 400V 1A DO214AC

Bourns Inc.
2,188 -

RFQ

CD214A-F1400

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 10pF @ 4V, 1MHz 25 ns 5 µA @ 40 V 400 V 1A -55°C ~ 150°C 1.25 V @ 1 A
VS-8ETX06PBF

VS-8ETX06PBF

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division
2,661 -

RFQ

VS-8ETX06PBF

Datasheet

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 24 ns 50 µA @ 600 V 600 V 8A -65°C ~ 175°C 3 V @ 8 A
UGB12JT-E3/81

UGB12JT-E3/81

DIODE GEN PURP 600V 12A TO263AB

Vishay General Semiconductor - Diodes Division
3,938 -

RFQ

UGB12JT-E3/81

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 50 ns 30 µA @ 600 V 600 V 12A -55°C ~ 150°C 1.75 V @ 12 A
IDH06SG60CXKSA1

IDH06SG60CXKSA1

DIODE SCHOTTKY 600V 6A TO220-2

Infineon Technologies
3,707 -

RFQ

IDH06SG60CXKSA1

Datasheet

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 130pF @ 1V, 1MHz 0 ns 50 µA @ 600 V 600 V 6A (DC) -55°C ~ 175°C 2.3 V @ 6 A
VS-10MQ040NPBF

VS-10MQ040NPBF

DIODE SCHOTTKY 40V 1.5A SMA

Vishay General Semiconductor - Diodes Division
2,721 -

RFQ

VS-10MQ040NPBF

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 500 µA @ 40 V 40 V 1.5A -55°C ~ 150°C 540 mV @ 1 A
RGP10DHE3/73

RGP10DHE3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,486 -

RFQ

RGP10DHE3/73

Datasheet

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 1 A
BYD33JGPHE3/54

BYD33JGPHE3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,264 -

RFQ

BYD33JGPHE3/54

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.3 V @ 1 A
VS-MBR1035PBF

VS-MBR1035PBF

DIODE SCHOTTKY 35V 10A TO220AC

Vishay General Semiconductor - Diodes Division
3,864 -

RFQ

VS-MBR1035PBF

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 35 V 35 V 10A -65°C ~ 150°C 570 mV @ 10 A
UGB12JTHE3/81

UGB12JTHE3/81

DIODE GEN PURP 600V 12A TO263AB

Vishay General Semiconductor - Diodes Division
2,527 -

RFQ

UGB12JTHE3/81

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 50 ns 30 µA @ 600 V 600 V 12A -55°C ~ 150°C 1.75 V @ 12 A
SF3001PTHC0G

SF3001PTHC0G

DIODE GEN PURP 50V 30A TO247AD

Taiwan Semiconductor Corporation
2,933 -

RFQ

SF3001PTHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 30A -55°C ~ 150°C 950 mV @ 15 A
CDBV1100-HF

CDBV1100-HF

DIODE SCHOTTKY 100V 1A SOD323

Comchip Technology
2,103 -

RFQ

CDBV1100-HF

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 25pF @ 4V, 1MHz - 50 µA @ 100 V 100 V 1A -55°C ~ 150°C 820 mV @ 1 A
IDH08S120AKSA1

IDH08S120AKSA1

DIODE SCHOTTKY 1.2KV 7.5A TO220

Rochester Electronics, LLC
3,044 -

RFQ

IDH08S120AKSA1

Datasheet

Tube,Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 380pF @ 1V, 1MHz 0 ns 180 µA @ 1200 V 1200 V 7.5A (DC) -55°C ~ 175°C 1.8 V @ 7.5 A
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