| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF3002PT C0GDIODE GEN PURP 100V 30A TO247AD Taiwan Semiconductor Corporation |
3,716 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A | |
|
ACDBZ2240-HFDIODE SCHOTTKY 40V 2A Z2PAK Comchip Technology |
2,272 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 115pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 2A | -55°C ~ 125°C | 500 mV @ 2 A |
|
SF3002PTHC0GDIODE GEN PURP 100V 30A TO247AD Taiwan Semiconductor Corporation |
2,213 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A |
|
CPD65-BAV45-CTDIODE GEN PURP 20V 50MA DIE Central Semiconductor Corp |
2,247 | - |
RFQ |
Datasheet |
Tray | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 1.3pF @ 0V, 1MHz | 600 ns | 5 pA @ 5 V | 20 V | 50mA (DC) | -65°C ~ 125°C | 1 V @ 10 mA | |
|
SF3003PT C0GDIODE GEN PURP 150V 30A TO247AD Taiwan Semiconductor Corporation |
2,596 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A | |
|
VS-10MQ100NPBFDIODE SCHOTTKY 100V 1A SMA Vishay General Semiconductor - Diodes Division |
3,640 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 38pF @ 10V, 1MHz | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 780 mV @ 1 A | |
|
1N4002SP BKDIODE GEN PURP 100V 1A DO41 Central Semiconductor Corp |
2,238 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
SF3003PTHC0GDIODE GEN PURP 150V 30A TO247AD Taiwan Semiconductor Corporation |
3,405 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A |
|
1N4004 BKDIODE GEN PURP 400V 1A DO41 Central Semiconductor Corp |
2,308 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 200 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
SF3004PTHC0GDIODE GEN PURP 200V 30A TO247AD Taiwan Semiconductor Corporation |
3,326 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A |
|
1N4004GPP BKDIODE GEN PURP 400V 1A DO41 Central Semiconductor Corp |
3,708 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
SF3005PT C0GDIODE GEN PURP 300V 30A TO247AD Taiwan Semiconductor Corporation |
2,560 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 30A | -55°C ~ 150°C | 1.3 V @ 15 A | |
|
RGP10GE-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,065 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BYD33KGP-E3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,407 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 300 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
VS-MBR1045PBFDIODE SCHOTTKY 45V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,838 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | 600pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 175°C | 570 mV @ 10 A | |
|
UGB15JT-E3/81DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,971 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 15A | -55°C ~ 150°C | 1.75 V @ 15 A | |
|
IDH08SG60CXKSA1DIODE SCHOTTKY 600V 8A TO220-2 Infineon Technologies |
2,340 | - |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 240pF @ 1V, 1MHz | 0 ns | 70 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 2.1 V @ 8 A |
|
VS-15MQ040NPBFDIODE SCHOTTKY 40V 1.5A SMA Vishay General Semiconductor - Diodes Division |
2,787 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 134pF @ 10V, 1MHz | - | 500 µA @ 40 V | 40 V | 1.5A | -40°C ~ 150°C | 490 mV @ 2 A | |
|
1N4005GL BKDIODE GEN PURP 600V 1A DO41 Central Semiconductor Corp |
3,675 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | ||
|
SF3005PTHC0GDIODE GEN PURP 300V 30A TO247AD Taiwan Semiconductor Corporation |
2,697 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 30A | -55°C ~ 150°C | 1.3 V @ 15 A |