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Diodes-Rectifiers-Single

Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
CSA2K-E3/I DIODE GPP 2A 800V DO-214AC SMA Vishay General Semiconductor - Diodes Division	2,889	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	11pF @ 4V, 1MHz	2.1 µs	5 µA @ 800 V	800 V	1.6A	-55°C ~ 150°C	1.15 V @ 2 A
SF2006GHC0G DIODE GEN PURP 400V 20A TO220AB Taiwan Semiconductor Corporation	3,981	-	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	20A	-55°C ~ 150°C	1.3 V @ 10 A
CS3D-E3/I DIODE GPP 200V 2A DO-214AB SMC Vishay General Semiconductor - Diodes Division	3,238	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	26pF @ 4V, 1MHz	2.8 µs	5 µA @ 200 V	200 V	2A	-55°C ~ 150°C	1.15 V @ 3 A
SF2007G C0G DIODE GEN PURP 500V 20A TO220AB Taiwan Semiconductor Corporation	2,248	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.7 V @ 10 A
IDC04S60CEX1SA1 DIODE SIC 600V 4A SAWN WAFER Infineon Technologies	3,525	-	RFQ	Datasheet	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	130pF @ 1V, 1MHz	0 ns	50 µA @ 600 V	600 V	4A (DC)	-55°C ~ 175°C	1.9 V @ 4 A
SF2007GHC0G DIODE GEN PURP 500V 20A TO220AB Taiwan Semiconductor Corporation	2,883	-	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.7 V @ 10 A
IDC04S60CEX7SA1 DIODE GEN PURPOSE SAWN WAFER Infineon Technologies	3,837	-	RFQ	Datasheet	Bulk		RoHS	-	-	Obsolete	Surface Mount	-	-	-	-	-	-	-
BYD33GGP-E3/54 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	3,741	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Obsolete	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1A	-65°C ~ 175°C	1.3 V @ 1 A
UGB12HT-E3/81 DIODE GEN PURP 500V 12A TO263AB Vishay General Semiconductor - Diodes Division	3,576	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	50 ns	30 µA @ 500 V	500 V	12A	-55°C ~ 150°C	1.75 V @ 12 A
IDH05S120AKSA1 DIODE SCHOTTKY 1200V 5A TO220-2 Infineon Technologies	2,657	-	RFQ	Datasheet	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	250pF @ 1V, 1MHz	0 ns	120 µA @ 1200 V	1200 V	5A (DC)	-55°C ~ 175°C	1.8 V @ 5 A
SF2007PT C0G DIODE GEN PURP 500V 20A TO247AD Taiwan Semiconductor Corporation	2,538	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.9 V @ 20 A
VS-10BQ060PBF DIODE SCHOTTKY 60V 1A SMB Vishay General Semiconductor - Diodes Division	2,555	-	RFQ	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	100 µA @ 60 V	60 V	1A	-55°C ~ 150°C	600 mV @ 1 A
IDC05S60CEX1SA1 DIODE SIC 600V 5A SAWN WAFER Infineon Technologies	3,178	-	RFQ	Datasheet	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	240pF @ 1V, 1MHz	0 ns	70 µA @ 600 V	600 V	5A (DC)	-55°C ~ 175°C	1.7 V @ 5 A
RGP10DE-E3/73 DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division	2,807	-	RFQ	Datasheet	Tape & Box (TB)	SUPERECTIFIER®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1A	-65°C ~ 175°C	1.3 V @ 1 A
SF2007PTHC0G DIODE GEN PURP 500V 20A TO247AD Taiwan Semiconductor Corporation	2,277	-	RFQ	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.9 V @ 20 A
BYD33GGPHE3/54 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	2,370	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1A	-65°C ~ 175°C	1.3 V @ 1 A
IDC08S60CEX1SA2 DIODE SIC 600V 8A SAWN WAFER Infineon Technologies	3,853	-	RFQ	Datasheet	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	310pF @ 1V, 1MHz	0 ns	100 µA @ 600 V	600 V	8A (DC)	-55°C ~ 175°C	1.7 V @ 8 A
VS-8ETL06PBF DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division	3,428	-	RFQ	Datasheet	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	-	250 ns	5 µA @ 600 V	600 V	8A	-65°C ~ 175°C	1.05 V @ 8 A
SF2008G C0G DIODE GEN PURP 600V 20A TO220AB Taiwan Semiconductor Corporation	2,430	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	20A	-55°C ~ 150°C	1.7 V @ 10 A
UGB12HTHE3/81 DIODE GEN PURP 500V 12A TO263AB Vishay General Semiconductor - Diodes Division	2,028	-	RFQ	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	50 ns	30 µA @ 500 V	500 V	12A	-55°C ~ 150°C	1.75 V @ 12 A