| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
CMR2U-06 TR13 PBFREEDIODE GEN PURP 600V 2A SMB Central Semiconductor Corp |
1,810 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 100 ns | 10 µA @ 600 V | 600 V | 2A | -60°C ~ 150°C | 1.7 V @ 2 A | |
|
TST30L150CW C0GDIODE SCHOTTKY 150V 15A TO220AB Taiwan Semiconductor Corporation |
1,099 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 15A | -55°C ~ 150°C | 920 mV @ 15 A | |
|
IDH05S120RECTIFIER DIODE, SCHOTTKY Rochester Electronics, LLC |
10,128 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
SS12FPRECTIFIER DIODE, SCHOTTKY, 1A, 2 Rochester Electronics, LLC |
9,053 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 150°C | 450 mV @ 1 A |
|
MMBD1401ARECTIFIER DIODE, 0.2A, 175V Rochester Electronics, LLC |
82,954 | - |
RFQ |
Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 50 ns | 100 nA @ 175 V | 175 V | 200mA | 150°C (Max) | 1 V @ 200 mA | |
|
PMEG3010BEA115NOW NEXPERIA PMEG3010BEA - RECTI Rochester Electronics, LLC |
5,912 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
RFN5BM3STLDIODE GEN PURP 350V 5A TO252 Rohm Semiconductor |
1,706 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 350 V | 350 V | 5A | 150°C (Max) | 1.5 V @ 5 A | |
|
NXPSC06650B6JDIODE SCHOTTKY 650V 6A D2PAK WeEn Semiconductors |
3,190 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | |
|
S3D10065D1DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions |
300 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 621pF @ 0V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 10A | -55°C ~ 175°C | 1.7 V @ 10 A | |
|
FR205T/RDIODE GEN PURP 600V 2A DO15 EIC SEMICONDUCTOR INC. |
9,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 10 µA @ 600 V | 600 V | 2A | -65°C ~ 150°C | 1.3 V @ 2 A | |
|
1N4005T/RSTD 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
75,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
SFA1002GHC0GDIODE GEN PURP 100V 10A TO220AC Taiwan Semiconductor Corporation |
2,362 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A |
|
SMD28HE-TPDIODE SCHOTTKY 80V 2A SOD123HE Micro Commercial Co |
3,314 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 80 V | 80 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
|
RGP10K-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,782 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BYM07-300HE3/83DIODE GEN PURP 300V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,070 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA |
|
IDH15S120AKSA1DIODE SCHOTTKY 1200V 15A TO220-2 Rochester Electronics, LLC |
987 | - |
RFQ |
Datasheet |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 750pF @ 1V, 1MHz | 0 ns | 360 µA @ 1200 V | 1200 V | 15A (DC) | -55°C ~ 175°C | 1.8 V @ 15 A |
|
|
VS-15ETX06PBFDIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,001 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 32 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
|
VS-MBRB1045TRLPBFDIODE SCHOTTKY 45V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,797 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
UH1BHE3/5ATDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,982 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
RGP10KE-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,519 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |