| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS38HE-TPDIODE SCHOTTKY 80V 3A SOD123HE Micro Commercial Co |
3,934 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 80 V | 80 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
RGP10ME-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,187 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
SFA1004G C0GDIODE GEN PURP 200V 10A TO220AC Taiwan Semiconductor Corporation |
3,079 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A | |
|
BYM11-800HE3/97DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,018 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BAR43DIODE SCHOTTKY 30V 200MA SOT23-3 onsemi |
2,529 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | - | 5 ns | 500 nA @ 25 V | 30 V | 200mA | 150°C (Max) | 800 mV @ 100 mA | |
|
APT30SCD65BDIODE SIC 650V 46A TO247 Microchip Technology |
3,592 | - |
RFQ |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 945pF @ 1V, 1MHz | 0 ns | 600 µA @ 650 V | 650 V | 46A | -55°C ~ 150°C | 1.8 V @ 30 A | ||
|
VS-8ETU04SPBFDIODE GEN PURP 400V 8A D2PAK Vishay General Semiconductor - Diodes Division |
2,593 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 43 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A |
|
SFA1004GHC0GDIODE GEN PURP 200V 10A TO220AC Taiwan Semiconductor Corporation |
2,723 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A |
|
|
MBR10H100-E3/4WDIODE SCHOTTKY 100V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,839 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 4.5 µA @ 100 V | 100 V | 10A | -65°C ~ 175°C | 770 mV @ 10 A | |
|
SFA1005G C0GDIODE GEN PURP 300V 10A TO220AC Taiwan Semiconductor Corporation |
2,025 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A | |
|
|
SB030-E3/73DIODE SCHOTTKY 30V DO-201AD Vishay General Semiconductor - Diodes Division |
3,607 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 30 V | 30 V | 5A | -65°C ~ 150°C | 480 mV @ 5 A | |
|
SFA1005GHC0GDIODE GEN PURP 300V 10A TO220AC Taiwan Semiconductor Corporation |
3,963 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A |
|
MBR1090GDIODE SCHOTTKY 90V 10A TO220-2 Rochester Electronics, LLC |
3,378 | - |
RFQ |
Datasheet |
Bulk,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -65°C ~ 175°C | 800 mV @ 10 A |
|
RGP10JRECTIFIER DIODE, 1A, 600V, DO-41 Rochester Electronics, LLC |
5,026 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
SB050-E3/73DIODE SCHOTTKY 50V DO-201AD Vishay General Semiconductor - Diodes Division |
2,994 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 5 mA @ 50 V | 50 V | 600mA | -65°C ~ 150°C | 700 mV @ 600 mA | |
|
SS320 V7GDIODE SCHOTTKY 3A 200V DO-214AB Taiwan Semiconductor Corporation |
1,622 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
STPSC12065G2-TR650 V POWER SCHOTTKY SILICON CAR STMicroelectronics |
1,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 750pF @ 0V, 1MHz | 0 ns | 150 µA @ 650 V | 650 V | 12A | -40°C ~ 175°C | 1.45 V @ 12 A |
|
IDT12S60CRECTIFIER DIODE, SCHOTTKY Rochester Electronics, LLC |
786 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
1N4007GP-AQST Rect, 1000V, 1A DComponents |
5,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 1000 V | 1000 V | 1A | -50°C ~ 175°C | 1.1 V @ 1 A | |
|
SFA1006G C0GDIODE GEN PURP 400V 10A TO220AC Taiwan Semiconductor Corporation |
3,079 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A |