| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MMBD6050RECTIFIER DIODE, 0.2A, 70V Rochester Electronics, LLC |
27,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 70 V | 200mA | -55°C ~ 150°C | 1.1 V @ 100 mA | |
|
S5A V7GDIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation |
1,548 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
SCS210AJTLLDIODE SCHOTTKY 650V 10A TO263AB Rohm Semiconductor |
3,789 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 365pF @ 1V, 1MHz | 0 ns | 200 µA @ 600 V | 650 V | 10A (DC) | 175°C (Max) | 1.55 V @ 10 A | |
|
NXPSC086506QDIODE SCHOTTKY 650V 8A TO220AC WeEn Semiconductors |
3,000 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
NTSJ30U80CTGNTSJ30U80 - SCHOTTKY RECTIFIER, Rochester Electronics, LLC |
1,250 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
DSK12SCHOTTKY DIODE SOD-123FL 20V 1A NextGen Components |
30,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SOD-123FL | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 0.3 mA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
BAV70W/ZL,115NEXPERIA BAV70W - RECTIFIER DIOD Rochester Electronics, LLC |
27,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
S5B V7GDIODE GEN PURP 100V 5A DO214AB Taiwan Semiconductor Corporation |
1,210 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
PCDP0865G1_T0_00001TO-220AC, SIC Panjit International Inc. |
1,995 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 296pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | |
|
NXPSC08650X6QDIODE SCHOTTKY 650V 8A TO220F WeEn Semiconductors |
2,998 | - |
RFQ |
Datasheet |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
DD600Fast Rect, 6000V, 0.02A, 150ns DComponents |
2,968 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | - | Standard | Active | - | - | 150 ns | - | 6000 V | 20mA | - | - | |
|
SK18SchottkyD, 80V, 1A DComponents |
1,102,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 80 V | 80 V | 1A | -50°C ~ 150°C | 850 mV @ 1 A | |
|
FR102T/RDIODE GEN PURP 100V 1A DO41 EIC SEMICONDUCTOR INC. |
25,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | |
|
GP2D060A120BDIODE SCHOTKY 1.2KV 60A TO247-2 SemiQ |
3,449 | - |
RFQ |
Datasheet |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 3809pF @ 1V, 1MHz | - | 500 µA @ 1200 V | 1200 V | 60A | -55°C ~ 175°C | 1.8 V @ 60 A |
|
UG54GHB0GDIODE GEN PURP 200V 5A DO201AD Taiwan Semiconductor Corporation |
3,615 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 175°C | 1.05 V @ 5 A |
|
GSXD300A170S2D5DIODE GP 1.7KV 300A ADD-A-PAK SemiQ |
3,729 | - |
RFQ |
Datasheet |
Bulk | Amp+™ | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | 540 ns | - | 1700 V | 300A (DC) | -40°C ~ 150°C | 1.9 V @ 300 A |
|
UG56G B0GDIODE GEN PURP 400V 5A DO201AD Taiwan Semiconductor Corporation |
3,801 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 175°C | 1.55 V @ 5 A | |
|
CDH333 TRDIODE GEN PURP 125V 200MA DO35 Central Semiconductor Corp |
3,818 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Last Time Buy | Through Hole | - | 3 µs | 3 nA @ 125 V | 125 V | 200mA | -65°C ~ 200°C | 1.15 V @ 300 mA | |
|
UG56GHB0GDIODE GEN PURP 400V 5A DO201AD Taiwan Semiconductor Corporation |
3,684 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 175°C | 1.55 V @ 5 A |
|
FERD20S100SHDIODE RECT 100V 20A I-PAK STMicroelectronics |
2,970 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | FERD (Field Effect Rectifier Diode) | Obsolete | Through Hole | - | - | 100 µA @ 100 V | 100 V | 20A | 175°C (Max) | 780 mV @ 10 A |