| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UG2D B0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,588 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
GP2D010A065ADIODE SCHOTTKY 650V 10A TO220-2 SemiQ |
3,536 | - |
RFQ |
Datasheet |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 527pF @ 1V, 1MHz | - | 100 µA @ 650 V | 650 V | 10A | -55°C ~ 175°C | 1.65 V @ 10 A |
|
UG2DHB0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
3,915 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
GP2D010A065CDIODE SCHOTTKY 650V 10A TO252 SemiQ |
2,967 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 527pF @ 1V, 1MHz | - | 100 µA @ 650 V | 650 V | 10A | -55°C ~ 175°C | 1.65 V @ 10 A |
|
GP2D020A065BDIODE SCHOTTKY 650V 20A TO247-2 SemiQ |
3,089 | - |
RFQ |
Datasheet |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 1054pF @ 1V, 1MHz | - | 200 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.65 V @ 20 A |
|
UG54G B0GDIODE GEN PURP 200V 5A DO201AD Taiwan Semiconductor Corporation |
2,543 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 175°C | 1.05 V @ 5 A | |
|
FDH444TRRECTIFIER DIODE, 0.2A, 150V Rochester Electronics, LLC |
40,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2.5pF @ 0V, 1MHz | 60 ns | 50 nA @ 100 V | 125 V | 200mA | 175°C (Max) | 1.2 V @ 300 mA | |
|
STD20150TRDIODE SCHOTTKY 150V DPAK SMC Diode Solutions |
1,683 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | - | -55°C ~ 150°C | 1.55 V @ 20 A | |
|
1N5287FED .33 MA DO35 Solid State Inc. |
980 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 363mA (DC) | -55°C ~ 200°C | 1 V @ 290.4 mA | |
|
SCS206AGHRCDIODE SCHOTTKY 650V 6A TO-220-2 Rohm Semiconductor |
935 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 219pF @ 1V, 1MHz | 0 ns | 120 µA @ 600 V | 650 V | 6A (DC) | 175°C (Max) | 1.55 V @ 6 A |
|
BY254-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
1,700 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 800 V | 800 V | 3A | -50°C ~ 150°C | 1.1 V @ 3 A | |
|
SK110Schottky D, 100V, 1.00A DComponents |
210,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 100 V | 100 V | 1A | -50°C ~ 150°C | 850 mV @ 1 A | |
|
1N4006T/RSTD 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
40,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
HS3A V7GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
1,614 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
1N5298FED 1.1 MA DO35 Solid State Inc. |
910 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 1.21A (DC) | -55°C ~ 200°C | 1.4 V @ 968 mA | |
|
PCDP2065G1_T0_00001TO-220AC, SIC Panjit International Inc. |
2,000 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 747pF @ 1V, 1MHz | 0 ns | 120 µA @ 650 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | |
|
SL1045SCHOTTKY DIODE TO-277 45V 10A NextGen Components |
246,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 45 V | 45 V | 10A | - | 450 mV @ 10 A | |
|
S2DST Rect, 200V, 2A DComponents |
123,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 200 V | 200 V | 2A | -50°C ~ 150°C | 1.15 V @ 2 A | |
|
BAS40W,115NEXPERIA BAS40W - RECTIFIER DIOD Rochester Electronics, LLC |
39,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 5pF @ 0V, 1MHz | - | 10 µA @ 40 V | 40 V | 120mA (DC) | 150°C (Max) | 1 V @ 40 mA | |
|
S4K V7GDIODE GEN PURP 800V 4A DO214AB Taiwan Semiconductor Corporation |
1,565 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A |