| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC12650WQSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
1,200 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 328pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 12A | 175°C | 1.7 V @ 12 A | |
|
S3K-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
66,000 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 800 V | 800 V | 3A | -50°C ~ 150°C | 1.15 V @ 3 A | |
|
SS14SCHOTTKY DIODE SMA 40V 1A NextGen Components |
5,415,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SMA | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 300 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | - |
|
PMEG3005ESFCYLPMEG3005ESF - 30 V, 0.5 A LOW VF Rochester Electronics, LLC |
63,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
S4J V7GDIODE GEN PURP 600V 4A DO214AB Taiwan Semiconductor Corporation |
1,428 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | |
|
1N5288FED .39 MA DO35 Solid State Inc. |
2,390 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 429mA (DC) | -55°C ~ 200°C | 1.05 V @ 343.2 mA | |
|
SCS215AGHRCDIODE SCHOTTKY 650V 15A TO-220-2 Rohm Semiconductor |
318 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 550pF @ 1V, 1MHz | 0 ns | 300 µA @ 600 V | 650 V | 15A (DC) | 175°C (Max) | 1.55 V @ 15 A |
|
BY253-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
406,300 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 600 V | 600 V | 3A | -50°C ~ 150°C | 1.1 V @ 3 A | |
|
B5819WSSCHOTTKY DIODE SOD-323 40V 1A NextGen Components |
3,723,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SOD-323 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | - | 600 mV @ 1 A |
|
BAS16BAS16 - GENERAL PURPOSE HIGH SPE Rochester Electronics, LLC |
56,373 | - |
RFQ |
Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 85 V | 200mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
S4B V7GDIODE GEN PURP 100V 4A DO214AB Taiwan Semiconductor Corporation |
1,402 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | |
|
1N5310FED 3.3 MA DO35 Solid State Inc. |
1,000 | - |
RFQ |
Datasheet |
Box | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
NXPSC12650B6JSILICON CARBIDE POWER DIODE WeEn Semiconductors |
6,400 | - |
RFQ |
Cut Tape (CT),Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 380pF @ 1V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 12A | 175°C (Max) | 1.7 V @ 12 A | ||
|
FFB10UP20STMRECTIFIER DIODE, 10A, 200V, TO-2 Rochester Electronics, LLC |
2,686 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 45 ns | 100 µA @ 200 V | 200 V | 10A | -65°C ~ 150°C | 1.15 V @ 10 A | |
|
SS16SCHOTTKY DIODE SMA 60V 1A NextGen Components |
1,555,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SMA | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 300 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | - |
|
PMEG4005ESFCYLPMEG4005ESF - 40V, 0.5A LOW VF M Rochester Electronics, LLC |
54,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
SL42-E3/57TDIODE SCHOTTKY 20V 4A DO214AB Vishay General Semiconductor - Diodes Division |
1,217 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 4A | -55°C ~ 125°C | 420 mV @ 4 A | |
|
1N5313FED 4.3MA DO35 Solid State Inc. |
1,000 | - |
RFQ |
Datasheet |
Box | RoHS | - | Standard | Active | Through Hole | - | - | - | 100 V | - | -55°C ~ 200°C | - | |
|
LXS301-23-0SI SCHOTTKY NON HERMETIC PLASTIC Microchip Technology |
177 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1.4pF @ 0V, 1MHz | - | 200 nA @ 15 V | 20 V | - | -55°C ~ 125°C | 430 mV @ 1 mA | |
|
AL1J-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
2,500 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 1.5 µs | 3 µA @ 600 V | 600 V | 1A | -50°C ~ 175°C | 1.3 V @ 1 A |